N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D37E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.4 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302TT10GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8321E18AD

同步突发

Memory & Data Storage

36 Mbit

2

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

16 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

500 MHz

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

表面贴装

1.9 V

9 Bit

-40 to 100 °C

GS81302TT11GE

144 Mbit

1

1.08 A

Pipelined

16 M x 9

23 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

18

- 40 C

2.7 V

+ 85 C

200 MHz

有

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS832218AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

36 Bit

2.7, 3.6 V

有

375 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.2 ns

85 °C

有

GS8322Z36AGD-375I

375 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

290 mA, 400 mA

4.2@Flow-Through/2.5

1 M x 36

3-STATE

1.4 mm

36

SRAM

0.04 A

36

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2, 2.7 V

有

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8640FZ36GT-7.5V

2097152 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.5

QFP

Commercial grade

133.3 MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

0 to 70 °C

Tray

GS8640FZ36GT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

230 mA

7.5

2 M x 36

1.6 mm

36

SRAM

72

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-48

48

GSI技术

GSI技术

N

FBGA

3.3000 V

Asynchronous

256 kWords

16 Bit

表面贴装

3.6 V

135

3 V

SMD/SMT

Parallel

-40 to 125 °C

GS74117AX

Asynchronous

Memory & Data Storage

4 Mbit

1

90 mA

12 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

GS8662DT10BGD

72 Mbit

2

630 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

85 °C

无

GS832132AD-150V

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

0 to 85 °C

GS832132AD

3A991.B.2.B

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

1.4 mm

32

20 Bit

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

153.8@Flow-Through/200@Pipelined MHz

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

70 °C

无

GS8321Z36AD-200V

200 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

表面贴装

2, 2.7 V

36 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

0 to 85 °C

GS8321Z36AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

4.2 ns

70 °C

有

GS8161Z18DGD-375

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8161Z18DGD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

1.7, 2.3 V

Synchronous

512 kWords

表面贴装

2, 2.7 V

72 Bit

有

225 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7 ns

70 °C

无

GS832272C-225V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

142.8@Flow-Through/225@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS832272C

无

3A991.B.2.B

同步突发

FLOW-THROUGH OR PIELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

255 mA, 350 mA

7 ns

Flow-Through/Pipelined

512 k x 72

1.7 mm

72

19 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

FBGA

DDR

0 to 85 °C

72 Mbit

1

495 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z32AD-333

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

333 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

LBGA,

0 to 85 °C

GS8321Z32AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1MX32

1.4 mm

32

20 Bit

36 Mbit

33554432 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8321E36AD

同步突发

Memory & Data Storage

36 Mbit

4

260 mA, 315 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

333 MHz

+ 100 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

-40 to 100 °C

36 Mbit

2

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

715 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.9 V

9 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

有

DDR

N

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

+ 70 C

550 MHz

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342T11BD-550

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

550 MHz

表面贴装

0 to 85 °C

Tray

GS8342T11BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

800 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

0.255 A

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 70 °C

Tray

GS81302T10E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

450 MHz

FBGA

QDR

-40 to 100 °C

GS81302D06GE

144 Mbit

2

1.185 A

Pipelined

16 M x 8

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T07GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.01 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T37GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.19 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

500 MHz

BGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 85 °C

Tray

GS82582QT20GE

SigmaQuad-II+ B2

Memory & Data Storage

288 Mbit

1

1.43 A

Pipelined

16 M x 18

23 Bit

SRAM

288 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

333 MHz

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

表面贴装

1.9 V

36 Bit

-40 to 100 °C

144 Mbit

2

1.01 A

Pipelined

4 M x 36

21 Bit

144 Mbit

Industrial