N/A

-

BGA-165

165

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

375 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

36 Mbit

2

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

18 b

23 b

288 Mb

288

400 MHz

无

N/A

-

YES

144

144

16000000

PLASTIC/EPOXY

未说明

有

GS4288S18GL-25

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.61

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

TQFP-100

100

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

238@Flow-Through/375.9@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 85 C

3.6 V

-40 to 100 °C

Bulk

GS8320E18AGT

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

144 Mbit

2

1.185 A

Pipelined

16 M x 9

22 Bit

144 Mbit

Industrial

无

N/A

-

BGA-165

165

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

745 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662QT19BD-250I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Bulk

GS8662QT19BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

730 mA

Pipelined

4 M x 18

1.4 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-119

119

18 Bit

2.7, 3.6 V

Compliant

300 MHz

+ 125 C

3.6 V

- 55 C

2.3 V

SMD/SMT

Parallel

200@Flow-Through/300@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

-55 to 125 °C

Bulk

125 °C

-55 °C

9 Mbit

2

205 mA, 260 mA

5@Flow-Through/2.5@P

512 k x 18

19 Bit

9 Mb

9

无

N/A

-

165

表面贴装

Compliant

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

2

Pipelined

21 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

GSI技术

Parallel

SMD/SMT

2.3 V

36

- 40 C

3.6 V

+ 85 C

300 MHz

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

SDR

SyncBurst

GSI技术

-40 to 85 °C

Tray

GS88118CGD

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

YES

144

144

32000000

PLASTIC/EPOXY

未说明

无

GS4288S09L-24I

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.7

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

9 b

24 b

288 Mb

400 MHz

无

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

9 b

24 b

288 Mb

300 MHz

无

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x17)

165

Synchronous

8 MWords

18 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Tray

GS81302Q18

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302Q18GE-300I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

300 MHz

QDR

1.8000 V

-40 to 100 °C

Tray

GS81302Q18GE

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

300 MHz

1.26 A

SRAM

Parallel

Pipelined

8 M x 18

1.5 mm

18

-

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

8M x 18

17 mm

15 mm

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS81302DT10GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.185 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

表面贴装

1.9 V

18 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

Compliant

有

350 MHz

+ 85 C

1.9 V

-40 to 100 °C

Bulk

GS81302S18GE

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

950 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS8342Q19BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

895 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

1.8000 V

-40 to 100 °C

GS8662T10BD

72 Mbit

600 mA

0.45

8 M x 9

72

Industrial

N/A

-

BGA-165

165

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

GS8662QT37BD

72 Mbit

2

1.1 A

Pipelined

2 M x 36

20 Bit

72 Mbit

Commercial

N/A

-

12 Weeks

BGA-260

YES

260

260

BGA

1.3500 V

1.25 V

Synchronous

2 MWords

36 Bit

1.4 V

表面贴装

有

550 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

SigmaQuad-IIIe

Details

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8673EQ36BGK-550

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Commercial grade

QDR

GSI技术

0.4 ns

550/375 MHz

0 to 70 °C

Tray

GS8673EQ36BGK

3A991.B.2.B

SigmaQuad-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.67 A

Pipelined

2 M x 36

2.3 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

0 to 70 °C

Tray

GS864418E

同步突发

Memory & Data Storage

72 Mbit

2

250 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302D10E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-260

260

714 MHz

BGA

QDR

Synchronous

4 MWords

18 Bit

表面贴装

有

714 MHz

+ 85 C

0 C

8

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

N

QDR-III

Commercial grade

0 to 70 °C

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

1

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-260

260

表面贴装

1.4 V

36 Bit

2 MWords

Synchronous

1.25 V

1.3500 V

QDR

BGA

550/375 MHz

550 MHz

+ 85 C

1.4 V

0 C

1.25 V

SMD/SMT

Parallel

Commercial grade

0 to 70 °C

GS8673ED36BGK

72 Mbit

2.67 A

Pipelined

2 M x 36

19 Bit

72 Mbit

Commercial