N/A

-

8 Weeks

BGA-165

YES

165

165

1 MWords

18 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

BGA

5.19

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

GS8182S18BGD-400I

有

85 °C

0.45 ns

未说明

-40 °C

PLASTIC/EPOXY

1000000

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 85 °C

Tray

GS8182S18BGD

e1

有

3A991.B.2.B

SigmaSIO DDR-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

730 mA

Pipelined

1 M x 18

1.4 mm

18

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

36

SDR

Details

SyncBurst

0 to 70 °C

Tray

GS816132DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 32

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (13x15)

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS832136

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.5 ns

85 °C

有

GS832136AGD-333I

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Tray

GS832136AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

1M x 36

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D09BGD-400I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

BGA

Industrial grade

400 MHz

FBGA

DDR

-40 to 85 °C

Tray

GS8182D09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

730 mA

Pipelined

2 M x 9

1.4 mm

9

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-209

209

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

21

0 to 70 °C

Tray

GS816272CC

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

8

265 mA, 310 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

450 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

-40 to 85 °C

Tray

GS8342D07BD

SigmaQuad-II+ B4

85 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

795 mA

0.45

4 M x 8

20 b

SRAM

36 Mb

36

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

36 Bit

2 MWords

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662T37BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

910 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Tray

GS8342D

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342DT20BGD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

-40 to 100 °C

Tray

GS8342DT20BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

500 MHz

865 mA

SRAM

Parallel

Pipelined

2 M x 18

3-STATE

1.4 mm

18

-

19 Bit

SRAM

36 Mb

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

2M x 18

15 mm

13 mm

无

N/A

-

BGA-165

165

350 MHz

1.8000 V

Synchronous

8 Bit

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

-40 to 100 °C

Bulk

GS81302T07E

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

1

810 mA

0.45

16 M x 8

23 b

SRAM

144 Mb

144

Industrial

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S09E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

900 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

QDR-II

SigmaQuad-II+

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

Memory & Data Storage

114 Mbit

2

1.18 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

100

100

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS88032CGT-200T

262144 words

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.61

QFP

LQFP, QFP100,.63X.87

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

SYNCHRONOUS

0.17 mA

256KX32

3-STATE

1.6 mm

32

0.025 A

8388608 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

800 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS88032CGT-150V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.5

QFP

Commercial grade

150 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

0 to 70 °C

GS88032CGT

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

1.6 mm

32

18 Bit

9 Mbit

8388608 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662D06BD-450M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

Military grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

Tray

GS8662D06BD

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

MILITARY

72 Mbit

SYNCHRONOUS

Pipelined

8 M x 8

1.4 mm

8

23 Bit

SRAM

72 Mbit

67108864 bit

Military

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

DDR-II

Industrial grade

1.9 V

18 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

FBGA

450 MHz

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

-40 to 100 °C

Tray

GS81302TT20E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1.01 A

0.45

8 M x 18

SRAM

144

Industrial

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

36 Bit

1.4 V

表面贴装

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

Details

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673ET36BGK-550I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Industrial grade

550/375 MHz

BGA

DDR

1.3500 V

1.25 V

Synchronous

2 MWords

-40 to 85 °C

Tray

GS8673ET36BGK

3A991.B.2.B

SigmaDDR-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.03 A

Pipelined

2 M x 36

2.3 mm

36

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 70 °C

Tray

GS816272CGC

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

320 mA, 390 mA

4.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

375 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

375 MHz

-40 to 70 °C

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/225@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

225 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

0 to 70 °C

Tray

GS864418E

同步突发

Memory & Data Storage

72 Mbit

2

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

-40 to 85 °C

Tray

GS816273CGC

Pipeline

Memory & Data Storage

18 Mbit

8

360 mA

5.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS864436GE-166IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

125@Flow-Through/166@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS864436GE

e1

有

3A991.B.2.B

同步突发

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

285 mA, 345 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.4 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS816272CC-250V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 70 °C

Tray

GS816272CC

无

3A991.B.2.B

SCD/DCD

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

18 Mbit

8

SYNCHRONOUS

265 mA, 350 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 125 C

3.6 V

- 55 C

2.3 V

SMD/SMT

Parallel

Military grade

200@Flow-Through/300@Pipelined MHz

-55 to 125 °C

GS88218CD

9 Mbit

2

205 mA, 260 mA

5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

9 Mbit

Military

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Military grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

-55 to 125 °C

Tray

GS81302T08E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Military

SRAM