N/A

-

BGA-165

165

SigmaSIO DDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

8 Bit

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 70 °C

Tray

GS8182S08BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

2

720 mA

Pipelined

2 M x 8

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

70 °C

有

GS8182R08BGD-375

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

0 to 70 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX8

1.4 mm

8

19 Bit

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS88032CGT-200IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

200 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

-40 to 85 °C

GS88032CGT

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

1.6 mm

32

18 Bit

9 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

435 MHz

FBGA

SDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

435 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D37BGD-435I

435 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

-40 to 85 °C

Tray

GS8182D37BGD

e1

有

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

900 mA

Pipelined

512 k x 36

3-STATE

1.4 mm

36

17 Bit

SRAM

18 Mbit

0.2 A

18874368 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

Commercial grade

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

0 to 85 °C

144 Mbit

1.3 A

0.45

4 M x 36

144

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

表面贴装

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

133.3@Flow-Through/150@Pipelined MHz

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS88118CGT

同步突发

Memory & Data Storage

9 Mbit

1

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342Q19BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8342Q19BD

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

895 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.245 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

-40 to 85 °C

Tray

GS864436GE

同步突发

Memory & Data Storage

72 Mbit

4

225 mA, 305 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS864218GB-300I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS864218GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

290 mA, 390 mA

5.5 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

165

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

Industrial grade

-40 to 100 °C

4

Flow-Through/Pipelined

20 Bit

36 Mbit

Industrial

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4.2 ns

70 °C

有

GS8322Z36AGB-375

375 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

0 to 85 °C

Tray

GS8322Z36AGB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

100

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

,

有

GS8320E36AGT-150IV

活跃

5.8

GSI TECHNOLOGY

Industrial grade

150 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

-40 to 85 °C

Tray

GS8320E36AGT

DCD Synchronous Burst

Memory & Data Storage

compliant

36 Mbit

4

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS88218CGD-200

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS88218CGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

130 mA, 155 mA

6.5 ns

512 k x 18

1.4 mm

18

SRAM

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

-40 to 100 °C

GS8321Z36AD

36 Mbit

4

260 mA, 315 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Industrial

N/A

-

8 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4 ns

85 °C

无

GS832218AB-400I

400 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.1

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

-40 to 100 °C

Tray

GS832218AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

690 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS881E32CGD-150I

262144 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

150 mA, 160 mA

7.5 ns

256 k x 32

1.4 mm

32

SRAM

8388608 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

有

375 MHz

+ 85 C

3.6 V

0 C

36

0 to 85 °C

Tray

GS8160Z36DGT

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-260

YES

260

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8673EQ36BGK-725S

2097152 words

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

有

725 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

QDR-III

Tray

GS8673EQ36BGK

3A991.B.2.B

SigmaQuad-IIIe B2

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

3.33 A

2 M x 36

2.3 mm

36

20 b

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 70 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

235 mA, 320 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

表面贴装

1.9 V

36 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

318 MHz

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302Q37E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.45 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

YES

100

100

6.5 ns

85 °C

有

GS84036CGT-200IT

3.3 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.66

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

128 kWords

36 Bit

2.7, 3.6 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

-40 °C

未说明

-40 to 100 °C

3A991.B.2.B

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

128KX36

1.6 mm

36

4 Mbit

4718592 bit

Industrial

PARALLEL

缓存SRAM

3.6 V

3 V

20 mm

14 mm

N/A

-

165

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS88236CGD-200

262144 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS88236CGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.4 mm

36

SRAM

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 70 °C

Tray

GS8642Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

240 mA, 290 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM