N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

QDR-II

Military grade

300 MHz

BGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

Compliant

有

300 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

Bulk

GS81302Q37E

SigmaQuad-II+ B2

Memory & Data Storage

1.8 V

144 Mbit

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Military

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

表面贴装

1.9 V

9 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T10GE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

1

810 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302S08GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

950 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302TT37GE-350

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

350 MHz

FBGA

DDR

0 to 85 °C

Tray

GS81302TT37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

1

SYNCHRONOUS

895 mA

Pipelined

4 M x 36

1.5 mm

36

21 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

357 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

357 MHz

FBGA

QDR

-40 to 100 °C

GS8662Q09BGD

72 Mbit

2

995 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Industrial

N/A

-

10 Weeks

YES

165

165

70 °C

有

GS8162Z18DGD-200VT

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

0 to 85 °C

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

2

SYNCHRONOUS

Flow-Through/Pipelined

1MX18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

117.6@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 70 °C

Tray

GS8322Z72C

NBT

Memory & Data Storage

36 Mbit

8

210 mA, 260 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

450 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

0 to 85 °C

Tray

GS81302D11GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

1.175 A

0.45

16 M x 9

SRAM

144

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

-40 to 85 °C

Tray

GS882Z18CGB

NBT

Memory & Data Storage

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

165

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

2

Pipelined

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

0 to 70 °C

Tray

GS8644Z18E

NBT

Memory & Data Storage

72 Mbit

2

210 mA, 250 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

333 MHz

FBGA

DDR

-40 to 100 °C

GS81302S18GE

144 Mbit

2

900 mA

Pipelined

8 M x 18

22 Bit

144 Mbit

Industrial

N/A

-

12 Weeks

BGA-165

YES

165

165

9 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302DT10E-350I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

-40 to 100 °C

Tray

GS81302DT10E

无

3A991.B.2.B

SigmaQuad-II+ B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

950 mA

Pipelined

16 M x 9

1.5 mm

9

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

12 Weeks

BGA-260

YES

260

260

Synchronous

4 MWords

18 Bit

1.4 V

表面贴装

有

500 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

Details

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

有

GS8673ET18BGK-500

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Commercial grade

500 MHz

BGA

DDR

1.3500 V

1.25 V

0 to 70 °C

Tray

GS8673ET18BGK

3A991.B.2.B

SigmaDDR-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

2

SYNCHRONOUS

1.38 A

Pipelined

4 M x 18

2.3 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-260

260

SigmaQuad-IIIe

Details

DDR

Industrial grade

550/375 MHz

BGA

QDR

1.3500 V

Synchronous

4 MWords

18 Bit

表面贴装

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 85 °C

Tray

GS8673ED18BGK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

1.93 A

1.1 Gb/s

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302TT07GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

- 40 C

3.6 V

+ 85 C

200 MHz

有

Industrial grade

200 MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

36 Bit

2, 2.7 V

表面贴装

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

10

-40 to 85 °C

Tray

GS8128436B

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

YES

119

119

未说明

7.5 ns

85 °C

无

GS81284Z36B-200IVT

1.8 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

200 MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

36 Bit

2, 2.7 V

表面贴装

BGA,

网格排列

4000000

PLASTIC/EPOXY

-40 °C

-40 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

4MX36

1.99 mm

36

20 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 70 °C

Tray

GS81302TT07E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

YES

119

119

GSI TECHNOLOGY

5.21

BGA

Compliant

BGA, BGA119,7X17,50

网格排列

3

256000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

12 ns

85 °C

无

GS840H18AB-100I

100 MHz

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

INDUSTRIAL

2

SYNCHRONOUS

0.2 mA

256KX18

3-STATE

2.19 mm

18

18 b

4.5 Mb

0.03 A

4.5

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

无

N/A

-

BGA-165

165

SigmaDDR-II+

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662TT38BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

755 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302S18GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

无

GS882Z36CD-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS882Z36CD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

1.115 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D37GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.41 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM