N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182D36BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

905 mA

Pipelined

512 k x 36

17 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

Tray

GS8662S08BGD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

510 mA

8 M x 8

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-119

119

200@Flow-Through/333@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2, 2.7 V

36 Bit

Compliant

有

333 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

0 to 85 °C

Bulk

GS8162Z36DB

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5@Flow-Through/3@Pip

512 k x 36

19 Bit

SRAM

18 Mb

18

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

2, 2.7 V

Compliant

有

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS880F18CGT-6.5V

153 MHz

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

153.8 MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

0 to 70 °C

Tray

GS880F18CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

70 °C

0 °C

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

115 mA

6.5

512 k x 18

3-STATE

1.6 mm

18

18 b

SRAM

9 Mb

0.025 A

9

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

YES

144

144

未说明

有

GS4288S18GL-18

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.59

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

16000000

PLASTIC/EPOXY

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

533 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

YES

144

144

未说明

有

GS4288S18GL-18I

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.61

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

16000000

PLASTIC/EPOXY

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

533 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

YES

144

144

未说明

无

GS4288S09L-25I

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.7

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

32000000

PLASTIC/EPOXY

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

YES

144

144

未说明

无

GS4288S09L-33I

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.7

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

32000000

PLASTIC/EPOXY

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

300 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302S09E

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

995 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342Q37BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.02 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302DT10GE

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

940 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302DT10GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.065 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

表面贴装

1.9 V

18 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

250 MHz

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662Q19BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

730 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

YES

144

144

未说明

有

GS4288S09GL-25

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.63

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

32000000

PLASTIC/EPOXY

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

有

GS832036AGT-200V

1048576 words

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

Compliant

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

0 to 85 °C

Bulk

3A991.B.2.B

85 °C

0 °C

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5@Flow-Through/3@P

1 M x 36

1.6 mm

36

20 b

36 Mb

36

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

-40 to 85 °C

Tray

GS8182S18BGD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

690 mA

Pipelined

1 M x 18

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

表面贴装

BGA-260

YES

260

260-BGA (22x14)

260

18 Bit

1.4 V

表面贴装

有

675 MHz

+ 100 C

1.4 V

- 40 C

GSI Technology Inc.

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

Tray

GS8673ED

活跃

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

有

GS8673ED18BGK-675I

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Industrial grade

675/450 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

4 MWords

-40 to 85 °C

Tray

GS8673ED18BGK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.3V ~ 1.4V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

675 MHz

2.26 A

SRAM

1.35 Gb/s

Parallel

Pipelined

4 M x 18

2.3 mm

18

-

20 Bit

SRAM

72 Mb

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

4M x 18

22 mm

14 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (15x17)

GSI Technology Inc.

1.7 V

GSI技术

SigmaDDR-II

DDR-II

GSI技术

Parallel

SMD/SMT

Tray

GS81302T36

活跃

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302T36GE

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.8 V

144 Mbit

2

350 MHz

905 mA

SRAM

Parallel

Pipelined

4 M x 36

-

22 Bit

SRAM

144 Mbit

Industrial

SRAM

4M x 36

无

N/A

-

Compliant

85 °C

-40 °C

4

20 b

36 Mb

无

N/A

-

YES

100

100

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8160E32BGT-200

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.72

QFP

LQFP,

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

512KX32

1.6 mm

32

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

6 Weeks, 2 Days

YES

209

209

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

1.8 ns

85 °C

无

GS8170LW72AC-300I

262144 words

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.21

BGA

无

3A991.B.2.B

85 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

8

SYNCHRONOUS

256KX72

1.7 mm

72

18 b

18 Mb

18874368 bit

PARALLEL

标准SRAM

1.95 V

1.7 V

22 mm

14 mm

无

N/A

-

Compliant

85 °C

-40 °C

2

20 b

18 Mb

无

N/A

-

Compliant

70 °C

0 °C

4

20 b

36 Mb

无

N/A

-

YES

165

165

GS8322Z36E-166I

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.48

BGA

无

85 °C

8 ns

未说明

-40 °C

PLASTIC/EPOXY

1000000

3

GRID ARRAY, LOW PROFILE

LBGA,

无

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

unknown

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

1MX36

1.4 mm

36

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

17 mm

15 mm

N/A

-

YES

165

165

13 X 15 MM, 1 MM PITCH, FBGA-165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8161Z36BD-200

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.68

BGA

Compliant

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

4

SYNCHRONOUS

512KX36

1.4 mm

36

19 b

18 Mb

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

无