N/A

-

TQFP-100

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Tray

GS840Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

130 mA, 140 mA

7.5 ns

128 k x 36

SRAM

SRAM

N/A

-

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Tray

GS81302D19E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

900 mA

8 M x 18

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Tray

GS81302T19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

690 mA

8 M x 18

SRAM

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

表面贴装

1.9 V

36 Bit

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662TT38BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

800 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

N

DDR-II

Commercial grade

300 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

0 to 85 °C

Tray

GS81302TT10E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

690 mA

0.45

16 M x 9

SRAM

144

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342DT38BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.225 A

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

32 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

133.3@Flow-Through/150@Pipelined MHz

有

150 MHz

+ 70 C

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

72

0 C

3.6 V

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881E32CGD-150

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

表面贴装

2.7, 3.6 V

0 to 70 °C

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

1.4 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

DDR

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

-40 to 85 °C

Tray

GS8182S36BGD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

905 mA

0.45

512 k x 36

18 b

SRAM

18 Mb

18

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

85 °C

无

GS832132AD-333V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 85 °C

Tray

GS832132AD

3A991.B.2.B

同步突发

85 °C

0 °C

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 32

1.4 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SigmaQuad-II+

N

DDR

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662Q10BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

720 mA

0.45

8 M x 9

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662QT07BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

850 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS880F18CGT

流过

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

125 mA

5.5 ns

Flow-Through

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

表面贴装

1.9 V

9 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

357 MHz

有

357 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662QT10BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

985 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662T19BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

GS8662T18BGD

85 °C

0 °C

1.8 V

72 Mbit

1

535 mA

Pipelined

4 M x 18

22 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8662DT20BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

990 mA

4 M x 18

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-209

YES

209

209

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS8642Z72C-167V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8642Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

72 Mbit

8

SYNCHRONOUS

270 mA, 340 mA

8 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

0 to 70 °C

Tray

GS881E32CGD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

无

N/A

-

209

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Commercial grade

0 to 70 °C

8

Flow-Through/Pipelined

19 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

0 C

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

DDR-II

N

0 to 85 °C

Tray

GS81302T11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.07 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662D36BD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Commercial grade

300 MHz

0 to 85 °C

Tray

GS8662D36BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

735 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

200 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

GS8662Q09BGD

85 °C

0 °C

1.8 V

72 Mbit

2

600 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

无

N/A

-

BGA-209

209

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

Compliant

有

133 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Tray

GS8322Z72GC

NBT

85 °C

-40 °C

Memory & Data Storage

36 Mbit

8

220 mA, 255 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无