N/A

-

12 Weeks

BGA-119

YES

119

119

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS81284Z18B-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

200 MHz

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS81284Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8MX18

1.99 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Compliant

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8321Z36AGD-400

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

250@Flow-Through/400@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

0 to 85 °C

Bulk

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4@Flow-Through/2.5@P

1 M x 36

1.4 mm

36

20 b

SRAM

36 Mb

36

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662QT19BGD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

600 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342Q19BD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

Bulk

GS8342Q19BD

3A991.B.2.B

SigmaQuad-II+ B2

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

885 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.235 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

500 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342TT20BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

730 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

14

-40 to 85 °C

Tray

GS864218GB

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662D36BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

740 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662R08BD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

600 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

4 MWords

18 Bit

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662Q18BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

250 MHz

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662Q18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

730 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-260

YES

260

260

500 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

有

GS8673ED36BGK-500I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Industrial grade

500 MHz

BGA

QDR

1.3500 V

Synchronous

2 MWords

36 Bit

表面贴装

有

-40 to 85 °C

Tray

GS8673ED36BGK

3A991.B.2.B

SigmaQuad-IIIe B4

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

1

SYNCHRONOUS

2.44 A

Pipelined

2 M x 36

2.3 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT19BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

535 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

0 to 85 °C

Tray

GS8662R36BD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

620 mA

0.45

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

165

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

270 mA, 350 mA

4.2@Flow-Through/2.5

512 k x 36

19 Bit

SRAM

18

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

133 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

BGA

5.14

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

GS832272GC-133IV

有

85 °C

8.5 ns

未说明

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS832272GC

e1

有

3A991.B.2.B

同步突发

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

36 Mbit

8

SYNCHRONOUS

220 mA, 255 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

1.7 mm

72

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662QT07BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

860 mA

Pipelined

8 M x 8

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D09GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1.005 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D09BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

715 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS816272CC-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

BGA

SDR

-40 to 85 °C

Tray

GS816272CC

无

3A991.B.2.B

SCD/DCD

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

220 mA, 240 mA

7.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T19BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

705 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FPBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

-40 to 85 °C

Bulk

GS8662T20BD

100 °C

-40 °C

1.8 V

72 Mbit

1

600 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS88132CGD

同步突发

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1.7 V

Compliant

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662D20BD-350I

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.75

BGA

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

表面贴装

1.9 V

18 Bit

4 MWords

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

705 mA

Pipelined

4 M x 18

1.4 mm

18

20 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

表面贴装

2, 2.7 V

18 Bit

4 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

250 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8644Z18E

NBT

70 °C

0 °C

Memory & Data Storage

72 Mbit

2

250 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

450 MHz

-40 to 100 °C

Bulk

GS8662DT20BGD

100 °C

-40 °C

1.8 V

72 Mbit

2

830 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

GS864418GE

70 °C

0 °C

72 Mbit

2

225 mA, 275 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

72 Mbit

Commercial

无