N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

-40 to 100 °C

Bulk

GS8662QT37BD

100 °C

-40 °C

1.8 V

72 Mbit

2

1.07 A

Pipelined

2 M x 36

20 Bit

72 Mbit

Industrial

无

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS880F18CGT

流过

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

165 mA

4.5 ns

Flow-Through

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

0 to 85 °C

Bulk

GS8662D10BGD

85 °C

0 °C

1.8 V

72 Mbit

2

695 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Commercial

无

N/A

-

TQFP-100

100

1.8, 2.5 V

1.7, 2.3 V

36 Bit

2, 2.7 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

181.8@Flow-Through/250@Pipelined MHz

-40 to 85 °C

Tray

GS881Z36CGT

NBT

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

160 mA, 200 mA

5.5@Flow-Through/3@P

256 k x 36

18 b

SRAM

9 Mb

9

SRAM

无

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

Synchronous

18 Bit

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

0 to 85 °C

Tray

GS8662D20BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

735 mA

0.45

4 M x 18

20 b

SRAM

72 Mb

72

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T20BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

-40 to 100 °C

Tray

GS8160E18DGT

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

21 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS832132AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

300 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

0 to 85 °C

Tray

GS81302T07GE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

690 mA

0.45

16 M x 8

23 b

SRAM

144 Mb

144

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

DDR

Details

SigmaDDR-II+

GSI技术

GSI技术

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T19BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

695 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4 ns

70 °C

有

GS832236AGB-400

400 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

0 to 85 °C

Tray

GS832236AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mb

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

70 °C

有

GS88132CGD-250

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS88132CGD

3A991.B.2.B

Pipeline/Flow Through

70 °C

0 °C

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

155 mA, 195 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

32

17 Bit

SRAM

9 Mbit

8388608 bit

Commercial

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-209

YES

209

209

72 Bit

2.7, 3.6 V

有

150 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS816272CC-150I

262144 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

133.3@Flow-Through/150@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

Tray

GS816272CC

无

3A991.B.2.B

Pipeline/Flow Through

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

220 mA, 220 mA

7.5@Flow-Through/3.8

256 k x 72

1.7 mm

72

18 b

SRAM

18 Mb

18

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T20BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

770 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

70 °C

有

GS832236AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

0 to 85 °C

Tray

GS832236AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

锡银铜

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

12 Weeks

YES

165

165

有

10

GSI技术

GSI技术

SigmaQuad-II+

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.37 ns

85 °C

无

GS81302D07E-450I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

表面贴装

1.9 V

8 Bit

16 MWords

Synchronous

-40 to 100 °C

Tray

GS81302D07E

无

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

2

SYNCHRONOUS

Pipelined

16MX8

1.5 mm

8

22 Bit

SRAM

144 Mbit

134217728 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT11BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

705 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mb

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

表面贴装

2.7, 3.6 V

18 Bit

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS8161E18DGD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342DT06BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

855 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

18 Bit

4 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

BGA,

网格排列

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS864218B-250IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

表面贴装

2, 2.7 V

-40 to 85 °C

Tray

GS864218B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

TQFP-100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

Non-Compliant

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

0 to 70 °C

GS8320E32AGT

36 Mbit

4

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

-40 to 100 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

900 mA

0.45

8 M x 18

21 b

SRAM

144 Mb

144

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS880F18CGT

流过

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

185 mA

4.5 ns

Flow-Through

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

9 Weeks, 2 Days

YES

44

44

Compliant

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

256000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

8 ns

85 °C

有

GS74116AGP-8IT

262144 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

TSOP2

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

ASYNCHRONOUS

0.14 mA

256KX16

3-STATE

1.2 mm

16

0.02 A

4194304 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

-40 to 85 °C

Tray

GS864418E

同步突发

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无