N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT20BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

680 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

-40 to 85 °C

Tray

GS8644Z18E

NBT

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T19BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662D08BD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

630 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SigmaDDR-II

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662T08BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

535 mA

Pipelined

8 M x 8

22 b

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8662T10BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 70 °C

Tray

GS864272GC

SCD/DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

72 Mbit

8

375 mA, 520 mA

5.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

505 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT10BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

610 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SigmaDDR-II+

N

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662TT07BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

495 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-260

SigmaQuad-IIIe

QDR-III

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

1.93 A

4 M x 18

SRAM

SRAM

N/A

-

44

Compliant

SRAM

SMD/SMT

85 °C

-40 °C

3.3 V

256 kB

1

10 ns

17 b

2 Mb

3.6 V

3 V

无

无SVHC

N/A

-

10 Weeks

YES

260

1.3 V

HBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.78

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

无

GS8673ET18BK-550I

4194304 words

3A991.B.2.B

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

SYNCHRONOUS

4MX18

2.3 mm

18

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.25 V

22 mm

14 mm

N/A

-

BGA-260

SigmaQuad-IIIe

DDR

有

500 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8673ED36BK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

2.44 A

2 M x 36

SRAM

SRAM

N/A

-

BGA-260

GSI技术

GSI技术

SigmaDDR-IIIe

N

DDR

有

500 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

Tray

GS8673ET36BK

SigmaDDR-IIIe B2

Memory & Data Storage

72 Mbit

1.87 A

2 M x 36

SRAM

SRAM

N/A

-

BGA-260

GSI技术

GSI技术

SigmaQuad-IIIe

N

QDR-III

有

500 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

Tray

GS8673EQ36BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

2.44 A

2 M x 36

SRAM

SRAM

N/A

-

BGA-165

165

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

-40 to 100 °C

Tray

GS81302T19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

YES

165

165

0.45 ns

70 °C

无

GS8342Q36BD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

1.95

BGA

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

0 to 85 °C

3A991.B.2.B

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

2

SYNCHRONOUS

0.825 mA

Pipelined

1MX36

3-STATE

1.4 mm

36

19 Bit

36 Mbit

0.205 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

165

Compliant

70 °C

0 °C

2

20 b

18 Mb

无

N/A

-

Compliant

85 °C

-40 °C

4

20 b

36 Mb

无

N/A

-

Compliant

70 °C

0 °C

2

20 b

18 Mb

无

N/A

-

Compliant

70 °C

0 °C

2

20 b

18 Mb

无

N/A

-

6 Weeks

YES

119

119

Obsolete

GS73024AGB-10

有

70 °C

10 ns

未说明

PLASTIC/EPOXY

128000

3

网格排列

14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

GSI TECHNOLOGY

5.71

BGA

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

128KX24

1.99 mm

24

3145728 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

YES

100

100

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8320Z18GT-200I

QFP

5.68

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

LQFP

2.5 V

2097152 words

LQFP,

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

SYNCHRONOUS

2MX18

1.6 mm

18

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm