N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

0 to 70 °C

Tray

GS88236CGB

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

0 to 70 °C

GS8642Z72C

72 Mbit

8

375 mA, 520 mA

5.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

TQFP-100

YES

100

100

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS881Z18CGT-150IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

-40 to 85 °C

GS881Z18CGT

e3

有

3A991.B.2.B

Matte Tin (Sn)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS881Z32CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS88218CB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

YES

119

119

BGA, BGA119,7X17,50

网格排列

3

128000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

12 ns

70 °C

无

GS840H32AB-100

100 MHz

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.19 mA

128KX32

3-STATE

2.19 mm

32

0.02 A

4194304 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662DT10BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

590 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4 ns

70 °C

无

GS8322Z18AB-400

400 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8322Z18AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8320Z18AGT

NBT

Memory & Data Storage

36 Mbit

2

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

YES

165

165

未说明

6.5 ns

125 °C

无

GS8162Z36BD-200M

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.49

BGA

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-55 °C

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

MILITARY

SYNCHRONOUS

512KX36

1.4 mm

36

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS816218DGB-333IV

1048576 words

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

有

333 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS816218DGB

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

INDUSTRIAL

18 Mbit

SYNCHRONOUS

240 mA, 300 mA

5 ns

1 M x 18

1.99 mm

18

SRAM

18874368 bit

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 85 °C

GS88236CGB

9 Mbit

4

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Industrial

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS864436GE-166I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

142.8@Flow-Through/166@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS864436GE

e1

有

3A991.B.2.B

同步突发

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

285 mA, 345 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 70 °C

36 Mbit

8

235 mA, 320 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881Z32CGD

NBT

Memory & Data Storage

9 Mbit

1

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

7.5 ns

85 °C

无

GS8322Z18AB-150IV

150 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Tray

GS8322Z18AB

3A991.B.2.B

NBT

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

205 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

YES

119

119

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS840H18AGB-180I

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

BGA,

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

256KX18

2.19 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8162Z72CGC-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

BGA

-40 to 85 °C

Tray

GS8162Z72CGC

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

220 mA, 240 mA

7.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.2 ns

85 °C

无

GS832236AB-375I

375 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

-40 to 100 °C

Tray

GS832236AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D37BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

885 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.9 V

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

-40 to 100 °C

GS81302S18GE

144 Mbit

710 mA

0.45

8 M x 18

144

Industrial

N/A

-

8 Weeks

YES

165

165

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

8 Bit

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182R08BD-375

1.8 V

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX8

1.4 mm

8

19 Bit

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302S08GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

150 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

7.5 ns

85 °C

有

GS8322Z18AGB-150IV

150 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

-40 to 100 °C

Tray

GS8322Z18AGB

3A991.B.2.B

NBT

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

205 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 85 °C

36 Mbit

2

185 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial