N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS881E36CD-200

262144 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS881E36CD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.4 mm

36

18 b

SRAM

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T10GE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

895 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

400 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

250@Flow-Through/400@Pipelined MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

36 Mbit

4

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Industrial

无

N/A

-

BGA-119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/300@Pipelined MHz

-40 to 85 °C

GS88218CB

85 °C

-40 °C

9 Mbit

2

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

无

N/A

-

BGA-165

165

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8322Z36AD

NBT

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 b

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

Commercial grade

0 to 85 °C

85 °C

0 °C

1.8 V

1

Pipelined

22 Bit

72 Mbit

Commercial

无

N/A

-

8 Weeks

BGA-119

YES

119

119

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

5.5 ns

85 °C

无

GS8322Z18AB-250IV

250 MHz

2097152 words

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

-40 to 100 °C

Tray

GS8322Z18AB

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 285 mA

5.5@Flow-Through/3@P

2 M x 18

3-STATE

1.99 mm

18

21 b

SRAM

36 Mb

0.04 A

36

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342D19BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

705 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

165

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

Compliant

0 to 70 °C

70 °C

0 °C

1.8 V

1

0.45

20 b

18 Mb

18

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250 MHz

TQFP

SDR

1.8, 2.5 V

表面贴装

2, 2.7 V

32 Bit

256 kWords

Synchronous

1.7, 2.3 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881E32CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

表面贴装

1.9 V

36 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

250 MHz

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T36BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

620 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

333 MHz

-40 to 100 °C

Bulk

GS8662D09BD

100 °C

-40 °C

1.8 V

72 Mbit

2

640 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662QT19BGD-250

BGA

5.2

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

Commercial grade

250 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8662QT19BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

720 mA

Pipelined

4 M x 18

1.4 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342D11BGD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

795 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

36 Mbit

0.25 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342DT10BD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

715 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 85 °C

85 °C

-40 °C

1.8 V

1

Pipelined

20 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

400 MHz

FBGA

DDR

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342R18BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

610 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D10BD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

745 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662DT20BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

745 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mb

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

500 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302TT11GE

SigmaDDR-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

1.07 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无