N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS864036GT-200I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS864036GT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

100

表面贴装

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881Z36CGD-150

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.81

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

0 to 70 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

165

FBGA

1.8000 V

1.7 V

Synchronous

1.9 V

18 Bit

250 MHz

-40 to 85 °C

0.45

18

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662D18BGD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

250 MHz

0 to 85 °C

Tray

GS8662D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

500 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

6 Weeks

YES

48

48

512000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

无

GS74108AX-12I

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

无

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

6 Weeks

YES

44

44

未说明

12 ns

70 °C

有

GS74104AGP-12

1048576 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

TSOP2

TSOP2,

SMALL OUTLINE, THIN PROFILE

3

1000000

PLASTIC/EPOXY

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

COMMERCIAL

ASYNCHRONOUS

1MX4

1.2 mm

4

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Commercial grade

333 MHz

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8662R08BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

535 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

N/A

-

BGA-165

SyncBurst

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS881E32CD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8662S36BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

730 mA

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

QDR

1.8000 V

0 to 85 °C

GS8662D06BGD

72 Mbit

2

735 mA

Pipelined

8 M x 8

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

200 MHz

GS88118CD

9 Mbit

130 mA, 155 mA

6.5 ns

512 k x 18

N/A

-

BGA-165

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8662S18BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

695 mA

4 M x 18

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

270 mA, 350 mA

4.2 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8662S09BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

695 mA

8 M x 9

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8321E36AGD

同步突发

Memory & Data Storage

36 Mbit

235 mA, 270 mA

6.5 ns

1 M x 36

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS816132DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

300 mA, 385 mA

4 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS88132CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

140 mA, 170 mA

6.5 ns

256 k x 36

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS881E18CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

150 mA, 175 mA

6.5 ns

512 k x 18

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

SyncBurst

Details

SDR

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS816136DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

290 mA, 370 mA

4.2 ns

512 k x 36

SRAM

18

SRAM

N/A

-

BGA-165

SigmaDDR-II

DDR-II

有

350 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS81302T18E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

8 M x 18

SRAM

SRAM

N/A

-

N/A

-

N/A

-

N/A

-

BGA-165

Industrial grade

200 MHz

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

-40 to 100 °C

Tray

GS8662Q07BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

610 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM