N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342QT10BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

895 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662TT11BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

695 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Compliant

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q36BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

0 to 85 °C

GS8662Q36BGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.06 A

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

100

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

Commercial grade

0 to 70 °C

4

Flow-Through/Pipelined

20 Bit

36 Mbit

Commercial

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

250 MHz

FBGA

1.8000 V

1.7 V

8 MWords

8 Bit

1.9 V

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

-40 to 100 °C

Tray

GS8662Q08BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

730 mA

0.45

8 M x 8

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662Q08BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

850 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mb

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

9 Bit

8 MWords

Compliant

有

500 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662D11BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

890 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

72 Bit

2.7, 3.6 V

Compliant

有

225 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

-40 to 85 °C

Tray

GS832272GC

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

36 Mbit

8

265 mA, 370 mA

7@Flow-Through/2.7@P

512 k x 72

19 b

SRAM

36 Mb

36

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q36BGD-200

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Commercial grade

200 MHz

0 to 85 °C

Tray

GS8662Q36BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

740 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 70 C

2.7 V

0 C

18

0 to 85 °C

Bulk

GS832136AD

同步突发

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

200 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

-40 to 100 °C

Tray

GS8662Q37BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

750 mA

0.45

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 85 C

3.6 V

- 40 C

15

-40 to 85 °C

Tray

GS8644Z36GE

NBT

85 °C

-40 °C

Memory & Data Storage

72 Mbit

4

270 mA, 330 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 70 C

Parallel

SMD/SMT

1.7 V

0 C

1.9 V

Commercial grade

400 MHz

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

72 Mbit

1

625 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

SDR

SyncBurst

GSI技术

GSI技术

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4 ns

85 °C

有

GS832236AGD-400I

400 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

-40 to 100 °C

Bulk

GS832236AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-209

209

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

250 MHz

FBGA

SDR

表面贴装

2.7, 3.6 V

72 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

21

0 to 70 °C

Tray

GS816273CGC

Pipeline

70 °C

0 °C

Memory & Data Storage

18 Mbit

8

350 mA

5.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II

DDR

1.9 V

9 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

FBGA

400 MHz

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Bulk

GS8662D09BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

735 mA

0.45

8 M x 9

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302Q37E

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

940 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T20BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

625 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

+ 85 C

300 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342QT07BD-300I

300 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Compliant

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

Bulk

GS8342QT07BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

785 mA

4 M x 8

3-STATE

1.4 mm

8

21 b

SRAM

36 Mb

36

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

400 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

有

GS8162Z18DGB-400I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Bulk

GS8162Z18DGB

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-209

209

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

-40 to 85 °C

Tray

GS8322Z72C

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

36 Mbit

8

245 mA, 340 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8644Z36E-250V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8644Z36E

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

500 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662TT11BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

760 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302T20E

SigmaDDR-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

1

810 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无