N/A

-

BGA-165

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Tray

GS8662Q07BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

920 mA

8 M x 8

SRAM

SRAM

N/A

-

BGA-119

4 MWords

36 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

167 MHz

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS81284Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

375 mA, 430 mA

8 ns

Flow-Through/Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Tray

GS81302T19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

765 mA

8 M x 18

SRAM

SRAM

N/A

-

8 Weeks

TQFP-100

GSI技术

SyncBurst

Details

SDR

,

有

GS88132CGT-333

活跃

GSI TECHNOLOGY

5.8

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS88132CGT

Pipeline/Flow Through

Memory & Data Storage

compliant

9 Mbit

180 mA, 240 mA

4.5 ns

256 k x 36

SRAM

SRAM

N/A

-

TQFP-100

有

375 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

-40 to 100 °C

Tray

GS8160Z18DGT

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

Parallel

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

GS8321E32AGD

36 Mbit

200 mA, 210 mA

7.5 ns

1 M x 32

N/A

-

BGA-165

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Tray

GS882Z36CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

N/A

-

N/A

-

TQFP-100

SMD/SMT

Parallel

Commercial grade

200 MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

0 to 70 °C

36 Mbit

2

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

N/A

-

N/A

-

36

N/A

-

BGA-165

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Tray

GS8662S09BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

630 mA

8 M x 9

SRAM

SRAM

N/A

-

BGA-165

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS881E36CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

160 mA, 190 mA

6.5 ns

256 k x 36

SRAM

SRAM

N/A

-

Compliant

125 °C

-55 °C

2

21 b

36 Mb

36

无

N/A

-

N/A

-

36

N/A

-

N/A

-

N/A

-

N/A

-

400 MHz

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

-40 to 100 °C

Tray

0.45

144

N/A

-

N/A

-

BGA-165

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

-40 to 100 °C

Tray

GS8662T06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Tray

GS8662S36BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

885 mA

2 M x 36

SRAM

72

SRAM

N/A

-

Compliant

125 °C

-55 °C

2

21 b

36 Mb

36

无