品牌是'GSI' (10000)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 建筑学 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 产品类别 | 长度 | 宽度 | 辐射硬化 | |||||||||||||||||||||||||||||||||||||||||||||
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![]() | GS8662R18BGD-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | Details | DDR | Industrial grade | 333 MHz | DDR | 1.8000 V | Synchronous | 4 MWords | 18 Bit | 表面贴装 | 有 | 333 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II | -40 to 100 °C | Tray | GS8662R18BGD | SigmaDDR-II B4 | Memory & Data Storage | 72 Mbit | 1 | 545 mA | Pipelined | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS881E32CD-250I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | SyncBurst | SDR | 有 | 250 MHz | + 85 C | 3.6 V | - 40 C | 72 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | Tray | GS881E32CD | DCD Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 175 mA, 215 mA | 5.5 ns | 256 k x 32 | SRAM | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302T38GE-450I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | Details | DDR-II | Industrial grade | 450 MHz | DDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 450 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | SMD/SMT | -40 to 100 °C | Tray | GS81302T38GE | SigmaDDR-II+ | Memory & Data Storage | 144 Mbit | 1 | 1.2 A | Pipelined | 4 M x 36 | 21 Bit | SRAM | 144 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662D07BD-450I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | GSI技术 | GSI技术 | SigmaQuad-II+ | DDR | Industrial grade | 450 MHz | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 450 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | -40 to 100 °C | Tray | GS8662D07BD | SigmaQuad-II+ B4 | Memory & Data Storage | 72 Mbit | 2 | 830 mA | Pipelined | 8 M x 8 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8182R18BGD-167 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662Q19BD-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | N | DDR | Commercial grade | 250 MHz | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 18 Bit | 1.9 V | 表面贴装 | 有 | 250 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | SMD/SMT | 0 to 85 °C | Tray | GS8662Q19BD | SigmaQuad-II+ B2 | Memory & Data Storage | 72 Mbit | 2 | 720 mA | Pipelined | 4 M x 18 | 21 Bit | SRAM | 72 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8182T08BGD-300I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS88132CGT-250I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | TQFP-100 | 有 | 250 MHz | + 85 C | 3.6 V | - 40 C | 72 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | , | 有 | GS88132CGT-250I | 活跃 | GSI TECHNOLOGY | 5.8 | Tray | GS88132CGT | Pipeline/Flow Through | Memory & Data Storage | compliant | 9 Mbit | 175 mA, 215 mA | 5.5 ns | 256 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8182T18BGD-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D37E-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | GSI技术 | GSI技术 | SigmaQuad-II+ | N | QDR-II | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | Tray | GS81302D37E | SigmaQuad-II+ B4 | Memory & Data Storage | 144 Mbit | 1 A | 4 M x 36 | SRAM | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302T37GE-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | + 85 C | 1.9 V | - 40 C | 1.7 V | SMD/SMT | Parallel | 333 MHz | GS81302T37GE | 144 Mbit | 860 mA | 4 M x 36 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS88132CD-150 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | GSI技术 | GSI技术 | SyncBurst | N | SDR | 有 | 150 MHz | + 70 C | 3.6 V | 0 C | 72 | 2.3 V | SMD/SMT | Parallel | Tray | GS88132CD | Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 130 mA, 140 mA | 7.5 ns | 256 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8182T08BD-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS88132CGD-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | Details | SDR | 2.5, 3.3 V | Synchronous | 3.6 V | 2.3 V | SyncBurst | Industrial grade | 222.2@Flow-Through/333@Pipelined MHz | FBGA | SDR | 2.3, 3 V | 256 kWords | 32 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 333 MHz | + 85 C | - 40 C | 36 | SMD/SMT | Parallel | GSI技术 | GSI技术 | -40 to 85 °C | Tray | GS88132CGD | Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 9 Mbit | 1 | 200 mA, 260 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 36 | 17 Bit | SRAM | 9 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662T09BD-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II | N | DDR | Commercial grade | 333 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | 0 to 85 °C | Tray | GS8662T09BD | SigmaDDR-II B2 | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 72 Mbit | 1 | 535 mA | Pipelined | 8 M x 9 | 22 Bit | SRAM | 72 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662D09BD-350I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | DDR | Industrial grade | 350 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 350 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | -40 to 100 °C | Tray | GS8662D09BD | SigmaQuad-II | Memory & Data Storage | 72 Mbit | 2 | 705 mA | Pipelined | 8 M x 9 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302TT10GE-450 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 450 MHz | FBGA | 1.8000 V | 1.9 V | 9 Bit | 1.7 V | 有 | 450 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | Details | DDR-II | Commercial grade | 0 to 85 °C | Tray | GS81302TT10GE | SigmaDDR-II+ B2 | Memory & Data Storage | 144 Mbit | 1 A | 0.45 | 16 M x 9 | SRAM | 144 | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8644Z18GE-150 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | Details | SDR | Commercial grade | 133.3@Flow-Through/150@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 4 MWords | 18 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 150 MHz | + 70 C | 3.6 V | 0 C | 15 | 2.3 V | 0 to 70 °C | Tray | GS8644Z18GE | NBT | Memory & Data Storage | 72 Mbit | 2 | 225 mA, 275 mA | 8.5 ns | Flow-Through/Pipelined | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662TT07BD-300I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | GSI技术 | GSI技术 | SigmaDDR-II+ | DDR | 有 | Industrial grade | 300 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 8 Bit | 1.9 V | 表面贴装 | 300 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | -40 to 100 °C | Tray | GS8662TT07BD | SigmaDDR-II+ B2 | Memory & Data Storage | 72 Mbit | 1 | 505 mA | Pipelined | 8 M x 8 | 22 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321Z36AGD-150IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | Details | SDR | Industrial grade | 133.3@Flow-Through/150@Pipelined MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 1 MWords | 36 Bit | 2, 2.7 V | 表面贴装 | 有 | 150 MHz | + 85 C | 2.7 V | - 40 C | 18 | 1.7 V | -40 to 100 °C | Tray | GS8321Z36AGD | NBT | Memory & Data Storage | 36 Mbit | 4 | 220 mA, 230 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS88136CGT-250I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | YES | 100 | 100 | 有 | GS88136CGT-250I | 262144 words | 3.3 V | LQFP | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.28 | QFP | LQFP, | FLATPACK, LOW PROFILE | 256000 | UNSPECIFIED | -40 °C | 未说明 | 85 °C | 3A991.B.2.B | ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | CMOS | QUAD | 鸥翼 | 未说明 | 1 | 0.65 mm | compliant | R-XQFP-G100 | 不合格 | INDUSTRIAL | SYNCHRONOUS | 256KX36 | 1.6 mm | 36 | 9437184 bit | SERIAL | 缓存SRAM | 3.6 V | 3 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8342T10BD-450 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | BGA-165 | 165 | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | N | DDR | , | 无 | GS8342T10BD-450 | 活跃 | GSI TECHNOLOGY | 5.88 | Commercial grade | 450 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 450 MHz | 0 to 70 °C | Tray | GS8342T10BD | SigmaDDR-II+ B2 | Memory & Data Storage | compliant | 36 Mbit | 1 | 670 mA | Pipelined | 4 M x 9 | 21 Bit | SRAM | 36 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS88136CGT-250IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | TQFP-100 | YES | 100 | 100 | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 256 kWords | 36 Bit | 2, 2.7 V | 表面贴装 | 有 | 250 MHz | + 85 C | 2.7 V | - 40 C | 66 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | LQFP, | FLATPACK | 256000 | PLASTIC/EPOXY | -40 °C | 未说明 | 5.5 ns | 85 °C | 有 | GS88136CGT-250IV | 1.8 V | LQFP | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.28 | QFP | Industrial grade | 181.8@Flow-Through/250@Pipelined MHz | TQFP | SDR | -40 to 85 °C | Tray | GS88136CGT | 3A991.B.2.B | 同步突发 | ALSO OPERATES AT 2.5V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | 鸥翼 | 未说明 | 1 | 0.65 mm | compliant | R-PQFP-G100 | 不合格 | INDUSTRIAL | 9 Mbit | 1 | SYNCHRONOUS | 160 mA, 200 mA | 5.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.6 mm | 32 | 18 Bit | SRAM | 9 Mbit | 8388608 bit | Industrial | PARALLEL | 缓存SRAM | 2 V | 1.7 V | SRAM | 20 mm | 14 mm | |||||||||||||||||
![]() | GS8662R09BD-250I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | DDR | FBGA | 250 MHz | 250 MHz | + 85 C | 1.9 V | - 40 C | 1.7 V | SMD/SMT | Parallel | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 8000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 0.45 ns | 85 °C | 无 | GS8662R09BD-250I | 250 MHz | 1.8 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.49 | BGA | Industrial grade | 表面贴装 | 1.9 V | 9 Bit | 8 MWords | Synchronous | 1.7 V | 1.8000 V | -40 to 100 °C | e0 | 无 | 3A991.B.2.B | 锡铅 | 流水线结构 | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 1.5/1.8,1.8 V | INDUSTRIAL | 72 Mbit | 1 | SYNCHRONOUS | 435 mA | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | 72 Mbit | 0.215 A | 75497472 bit | Industrial | PARALLEL | COMMON | 标准SRAM | 1.7 V | 1.9 V | 1.7 V | 15 mm | 13 mm | |||||||||||||||||||
![]() | GS8342QT07BGD-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | BGA-165 | YES | 165 | 165 | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 15 | DDR | Details | SigmaQuad-II+ | GSI技术 | GSI技术 | Parallel | SMD/SMT | 1.7 V | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 3 | 4000000 | PLASTIC/EPOXY | BGA165,11X15,40 | 未说明 | 0.45 ns | 70 °C | 有 | GS8342QT07BGD-333 | 333 MHz | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.22 | BGA | Commercial grade | 333 MHz | 0 to 85 °C | Tray | GS8342QT07BGD | e1 | 有 | 3A991.B.2.B | SigmaQuad-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 1.5/1.8,1.8 V | COMMERCIAL | 36 Mbit | 2 | SYNCHRONOUS | 885 mA | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | 33554432 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 1.9 V | 1.7 V | SRAM | 15 mm | 13 mm |
GS8662R18BGD-333I
GSI Technology
分类:Memory
GS881E32CD-250I
GSI Technology
分类:Memory
GS81302T38GE-450I
GSI Technology
分类:Memory
GS8662D07BD-450I
GSI Technology
分类:Memory
GS8182R18BGD-167
GSI Technology
分类:Memory
GS8662Q19BD-250
GSI Technology
分类:Memory
GS8182T08BGD-300I
GSI Technology
分类:Memory
GS88132CGT-250I
GSI Technology
分类:Memory
GS8182T18BGD-333I
GSI Technology
分类:Memory
GS81302D37E-333
GSI Technology
分类:Memory
GS81302T37GE-333I
GSI Technology
分类:Memory
GS88132CD-150
GSI Technology
分类:Memory
GS8182T08BD-333I
GSI Technology
分类:Memory
GS88132CGD-333I
GSI Technology
分类:Memory
GS8662T09BD-333
GSI Technology
分类:Memory
GS8662D09BD-350I
GSI Technology
分类:Memory
GS81302TT10GE-450
GSI Technology
分类:Memory
GS8644Z18GE-150
GSI Technology
分类:Memory
GS8662TT07BD-300I
GSI Technology
分类:Memory
GS8321Z36AGD-150IV
GSI Technology
分类:Memory
GS88136CGT-250I
GSI Technology
分类:Memory
GS8342T10BD-450
GSI Technology
分类:Memory
GS88136CGT-250IV
GSI Technology
分类:Memory
GS8662R09BD-250I
GSI Technology
分类:Memory
GS8342QT07BGD-333
GSI Technology
分类:Memory
