N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT19BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

36 Bit

1.9 V

表面贴装

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342DT38BD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

1.125 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

133 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 125 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

-40 to 125 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

扩展工业

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

8 Bit

8 MWords

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mb

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

550 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662D20BD-550I

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.45

BGA

GS8662D20BD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

SYNCHRONOUS

990 mA

4MX18

1.4 mm

18

72

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT11BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Details

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS832132AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

GSI技术

活跃

GSI TECHNOLOGY

5.23

BGA

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662D06BGD-500

8388608 words

1.8 V

LBGA

RECTANGULAR

GS8662D06BGD

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

890 mA

8 M x 8

1.4 mm

8

72

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662TT37BD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

300 MHz

FBGA

0 to 85 °C

Tray

GS8662TT37BD

e0

无

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

625 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

0.22 A

75497472 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

-40 °C

未说明

7.5 ns

85 °C

无

GS832272C-200I

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

-40 to 85 °C

Tray

GS832272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

8

SYNCHRONOUS

245 mA, 340 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.08 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-119

119

1.7 V

14

- 40 C

2.7 V

+ 85 C

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 85 °C

Tray

GS864236B

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161Z36DGD

NBT

Memory & Data Storage

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T07GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

765 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

8 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

表面贴装

1.9 V

-40 to 100 °C

GS8662DT06BGD

72 Mbit

2

745 mA

Pipelined

8 M x 8

21 Bit

72 Mb

Industrial

N/A

-

8 Weeks

YES

100

100

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

12 ns

70 °C

有

GS840H18AGT-100

100 MHz

262144 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.7

QFP

LQFP, QFP100,.63X.87

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.19 mA

256KX18

3-STATE

1.6 mm

18

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662DT07BD-450

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

0 to 85 °C

Tray

GS8662DT07BD

3A991.B.2.B

SigmaQuad-II+ B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

820 mA

Pipelined

8 M x 8

1.4 mm

8

21 Bit

SRAM

72 Mbit

67108864 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662S09BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

745 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

Industrial grade

550 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

-40 to 100 °C

Tray

GS8342D06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

950 mA

0.45

4 M x 8

SRAM

36

Industrial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS816032DGT-333IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-119

119

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS882Z36CB

NBT

Memory & Data Storage

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

0 to 85 °C

Tray

GS8160Z18DGT

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS8644Z18E

NBT

Memory & Data Storage

72 Mbit

2

275 mA, 350 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

Synchronous

32 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 70 °C

Tray

GS88132CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

180 mA, 240 mA

4.5@Flow-Through/2.5

256 k x 36

SRAM

9

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D37BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

810 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS816272CGC-150I

262144 words

BGA

5.16

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

2.5 V

有

150 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS816272CGC

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

220 mA, 220 mA

7.5 ns

256 k x 72

1.7 mm

72

SRAM

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm