N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT20E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662D38BD-550

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.48

BGA

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Tray

GS8662D38BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

1.275 A

2 M x 36

1.4 mm

36

SRAM

72

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

125@Flow-Through/166@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS864418GE

同步突发

Memory & Data Storage

72 Mbit

2

240 mA, 285 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D18BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

375 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

375 MHz

FBGA

QDR

-40 to 100 °C

144 Mbit

2

1.115 A

Pipelined

4 M x 36

20 Bit

144 Mbit

Industrial

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342T06BD-550

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

550 MHz

FBGA

0 to 85 °C

Tray

GS8342T06BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

800 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.255 A

33554432 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS864418E

同步突发

Memory & Data Storage

72 Mbit

2

250 mA, 310 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT07BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D07BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

580 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS8161E18DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

1.04 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

N

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302DT07E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

-40 to 100 °C

Tray

GS8662S18BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

590 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302DT10E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS832132AD

同步突发

Memory & Data Storage

36 Mbit

4

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Industrial grade

-40 to 85 °C

1

Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

165

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

2

Pipelined

20 Bit

36 Mbit

Industrial

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T38BD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Tray

GS8342T38BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

955 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.25 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Military grade

200 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

128 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

- 55 C

84

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS842Z36CB

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

4

6.5 ns

Flow-Through/Pipelined

128 k x 36

17 Bit

SRAM

4 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302Q10E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.06 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302Q07GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.275 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

900 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

QDR-II

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q37BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.46

BGA

Commercial grade

333 MHz

0 to 85 °C

Tray

GS8662Q37BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.1 A

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

0.27 A

75497472 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

318 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

318 MHz

FBGA

QDR

-40 to 100 °C

GS81302Q37GE

144 Mbit

2

1.45 A

Pipelined

4 M x 36

21 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8321Z32AD

NBT

Memory & Data Storage

36 Mbit

4

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM