N/A

-

10 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

4 ns

70 °C

有

GS8160E36DGT-400

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Commercial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS8160E36DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SigmaDDR-II+

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662T19BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

GS8662T18BD

72 Mbit

1

505 mA

Pipelined

4 M x 18

22 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

755 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

表面贴装

333 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5 ns

85 °C

有

GS8322Z18AGD-333IV

333 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.09

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

-40 to 100 °C

3A991.B.2.B

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT11GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

800 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

-40 to 100 °C

Tray

GS8321E32AD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-48

48

表面贴装

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

16 Bit

3.6 V

-40 to 125 °C

GS74117AGX

Asynchronous

Memory & Data Storage

4 Mbit

1

105 mA

10 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342TT11BD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

500 MHz

FBGA

-40 to 100 °C

Tray

GS8342TT11BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

740 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342S09BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

715 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS816136DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

925 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mb

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS88118CGT-200IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS88118CGT

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

8

SRAM

9 Mbit

4194304 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

DDR

Industrial grade

400 MHz

FBGA

1.8000 V

1.7 V

8 MWords

8 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

-40 to 100 °C

Tray

GS8662T06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

635 mA

0.45

8 M x 8

SRAM

72

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Military grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 125 C

3.6 V

- 55 C

36

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS882Z36CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Military

SRAM

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

-40 to 85 °C

GS881Z18CGD

9 Mbit

1

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302R09E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

810 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342DT37BD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

450 MHz

FBGA

-40 to 100 °C

Tray

GS8342DT37BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Lead (Sn/Pb)

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

1.025 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342DT37BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

915 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR-II

Commercial grade

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302TT20GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

800 mA

0.45

8 M x 18

SRAM

144

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

4.5 ns

70 °C

有

GS88032CGT-333

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.61

QFP

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

0 to 70 °C

Tray

GS88032CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

3-STATE

1.6 mm

32

18 Bit

SRAM

9 Mbit

0.025 A

8388608 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

QDR

-40 to 100 °C

72 Mbit

2

705 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

表面贴装

2.7, 3.6 V

36 Bit

2 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

142.8@Flow-Through/166@Pipelined MHz

有

166 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

4

285 mA, 345 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS816218DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

865 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM