N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8662D07BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

695 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302D09GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

950 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II

DDR

Military grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8662Q18BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

980 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-165

165

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

0 to 70 °C

Tray

GS88218CGD

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

125 mA, 165 mA

5.5@Flow-Through/3@P

512 k x 18

SRAM

9

Commercial

SRAM

N/A

-

TQFP-100

100

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

0 to 70 °C

Tray

GS8640E18GT

DCD

Memory & Data Storage

72 Mbit

2

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

300 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

300 MHz

+ 85 C

-40 to 100 °C

GS81302DT37GE

144 Mbit

925 mA

0.45

4 M x 36

144

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302S09E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

66

- 40 C

2.7 V

+ 85 C

150 MHz

有

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

SMD/SMT

-40 to 85 °C

Tray

GS88118CGD

同步突发

Memory & Data Storage

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

表面贴装

1.9 V

8 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302T08E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

810 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Military grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

-55 to 125 °C

Tray

GS8662DT11BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-165

165

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Tray

GS881Z18CGD

NBT

Memory & Data Storage

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

-40 to 85 °C

Tray

GS88218CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8342Q10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

2.3 V

18

0 C

3.6 V

+ 70 C

250 MHz

有

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS8640E36GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

0 C

0 to 85 °C

Tray

GS8160Z36DGT

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302T37GE-333

2097152 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS81302T37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

850 mA

4 M x 36

1.5 mm

36

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

TQFP-100

100

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 100 C

3.6 V

- 40 C

-40 to 100 °C

Tray

GS8160E32DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

-40 to 100 °C

GS8662D19BD

72 Mbit

2

705 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662TT38BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

810 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

2.3 V

42

- 55 C

3.6 V

+ 125 C

300 MHz

有

Military grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

-55 to 125 °C

Tray

GS882Z36CB

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Military

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8662Q10BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

850 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

TQFP

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 70 °C

Tray

GS880Z18CGT

NBT

Memory & Data Storage

9 Mbit

165 mA, 220 mA

4.5@Flow-Through/2.5

512 k x 18

SRAM

9

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS8162Z72CGC-300I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

-40 to 85 °C

Tray

GS8162Z72CGC

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

300 mA, 425 mA

5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302T19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM