N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D09GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

950 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

Military grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8662Q18BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

980 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-165

165

181.8@Flow-Through/250@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

0 to 70 °C

Tray

GS88218CGD

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

125 mA, 165 mA

5.5@Flow-Through/3@P

512 k x 18

SRAM

9

Commercial

SRAM

N/A

-

BGA-165

165

DDR

Industrial grade

400 MHz

FBGA

1.8000 V

1.7 V

8 MWords

8 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

-40 to 100 °C

Tray

GS8662T06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

635 mA

0.45

8 M x 8

SRAM

72

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Military grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 125 C

3.6 V

- 55 C

36

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS882Z36CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Military

SRAM

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

-40 to 85 °C

GS881Z18CGD

9 Mbit

1

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302R09E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

810 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342DT37BD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

450 MHz

FBGA

-40 to 100 °C

Tray

GS8342DT37BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Lead (Sn/Pb)

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

1.025 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

100

100

未说明

6.5 ns

70 °C

有

GS881Z18CGT-200V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

0 to 70 °C

e3

有

3A991.B.2.B

Matte Tin (Sn)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

1

SYNCHRONOUS

Flow-Through/Pipelined

512KX18

1.6 mm

18

18 Bit

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662D11BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342R08BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

400 MHz

FBGA

-40 to 100 °C

Tray

GS8342R08BD

e0

3A991.B.2.B

SigmaDDR-II B4

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

610 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.225 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8321Z18AGD

NBT

Memory & Data Storage

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS88218CD-150V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 70 °C

Tray

GS88218CD

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

2

Pipelined

22 Bit

144 Mbit

Industrial

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

SDR

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS881Z32CGT

NBT

Memory & Data Storage

9 Mbit

1

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

SRAM

8 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

5.5 ns

85 °C

有

GS832218AGB-250IV

250 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

FBGA

-40 to 100 °C

Tray

GS832218AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

70 °C

有

GS8662Q36BGD-333

333 MHz

5.28

BGA

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8662Q36BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

SYNCHRONOUS

1.1 A

2 M x 36

3-STATE

1.4 mm

36

SRAM

75497472 bit

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D37GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

695 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-48

48

表面贴装

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

16 Bit

3.6 V

-40 to 125 °C

GS74117AGX

Asynchronous

Memory & Data Storage

4 Mbit

1

105 mA

10 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342TT11BD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

500 MHz

FBGA

-40 to 100 °C

Tray

GS8342TT11BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

740 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342S09BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

715 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS816136DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

925 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mb

Industrial

SRAM