GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS81302Q07E-318I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II	Industrial grade				318 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	318 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302Q07E				SigmaQuad-II+ B2				Memory & Data Storage												144 Mbit	2		1.275 A		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit		Industrial							SRAM
GS88236CGD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	256000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS88236CGD-150	262144 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	有	150 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details		Tray	GS88236CGD	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	9 Mbit		SYNCHRONOUS	130 mA, 140 mA	7.5 ns		256 k x 36		1.4 mm	36		SRAM		9437184 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS816272CGC-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	256 kWords	72 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	256000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS816272CGC-200IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	BGA	-40 to 85 °C	Tray	GS816272CGC	e1	有	3A991.B.2.B	SCD/DCD	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B209	不合格		INDUSTRIAL	18 Mbit	8	SYNCHRONOUS	240 mA, 300 mA	6.5 ns	Flow-Through/Pipelined	256 k x 72		1.7 mm	72	18 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8342DT20BD-550I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	550 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342DT20BD-550I	550 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	550 MHz	FBGA	-40 to 100 °C	Tray	GS8342DT20BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)			Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	950 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	19 Bit	SRAM	36 Mbit	37748736 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS88236CGD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	256000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS88236CGD-150I	262144 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	有	150 MHz	+ 85 C	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst		Tray	GS88236CGD	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	9 Mbit		SYNCHRONOUS	150 mA, 160 mA	7.5 ns		256 k x 36		1.4 mm	36		SRAM		9437184 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS882Z36CB-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	Industrial grade				200@Flow-Through/300@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 85 C	3.6 V	- 40 C	42	2.3 V	SMD/SMT	-40 to 85 °C	Tray	GS882Z36CB				NBT Pipeline/Flow Through				Memory & Data Storage												9 Mbit	4		185 mA, 245 mA	5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit		Industrial							SRAM
GS8662T18BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	Industrial grade					-40 to 100 °C																							1				Pipelined					22 Bit		72 Mbit		Industrial
GS81302T06GE-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302T06GE				SigmaDDR-II+				Memory & Data Storage												144 Mbit	1		1 A		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit		Commercial							SRAM
GS8662T18BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	N	DDR-II	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662T18BD				SigmaDDR-II B2				Memory & Data Storage												72 Mbit	1		590 mA		Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit		Commercial							SRAM
GS816132DGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	-40 to 85 °C	Tray	GS816132DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit		Industrial							SRAM
GS881Z18CGD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	SDR	Details	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	66	0 C	2.7 V	+ 70 C	200 MHz	有	LBGA,	GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS881Z18CGD-200V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	0 to 70 °C	Tray	GS881Z18CGD	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	9 Mbit	1	SYNCHRONOUS	115 mA, 140 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18		1.4 mm	18	18 Bit	SRAM	9 Mbit	9437184 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8662TT19BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662TT19BGD				SigmaDDR-II+ B2				Memory & Data Storage												72 Mbit	1		545 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit		Industrial							SRAM
GS8162Z72CC-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	72 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	0 to 70 °C	Tray	GS8162Z72CC				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	8		265 mA, 350 mA	5.5 ns	Flow-Through/Pipelined	256 k x 72				18 Bit	SRAM	18 Mbit		Commercial							SRAM
GS8161E18DGD-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	4.2 ns	70 °C	有	GS8161E18DGD-375	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	BGA	Commercial grade	238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 70 °C	Tray	GS8161E18DGD			3A991.B.2.B	DCD Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit	2	SYNCHRONOUS	250 mA, 320 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS81302D37E-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II	Industrial grade				450 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	450 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302D37E				SigmaQuad-II+ B4				Memory & Data Storage												144 Mbit	2		1.41 A		Pipelined	4 M x 36				20 Bit	SRAM	144 Mbit		Industrial							SRAM
GS864436E-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	250 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	Commercial grade				153.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	0 to 70 °C		GS864436E																				72 Mbit	4		270 mA, 400 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit		72 Mbit		Commercial
GS8673EQ18BGK-500I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-260	YES	260	260	有	500 MHz	+ 100 C	1.4 V	- 40 C	8	1.25 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-IIIe	Details	QDR-III	HBGA,	GRID ARRAY, HEAT SINK/SLUG	4000000	PLASTIC/EPOXY	未说明	0.4 ns	有	GS8673EQ18BGK-500I	1.3 V	HBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.72	Industrial grade	500 MHz	BGA	QDR	1.3500 V	Synchronous	4 MWords	18 Bit	表面贴装	-40 to 85 °C	Tray	GS8673EQ18BGK			3A991.B.2.B	SigmaQuad-IIIe B2		IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B260				72 Mbit	1	SYNCHRONOUS	1.77 A		Pipelined	4 M x 18		2.3 mm	18		SRAM	72 Mbit	75497472 bit	Industrial	PARALLEL		DDR SRAM		1.4 V	1.25 V	SRAM	22 mm	14 mm
GS8662T19BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662T19BD				SigmaDDR-II+ B2				Memory & Data Storage												72 Mbit	1		535 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit		Commercial							SRAM
GS81302T20E-450M	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	DDR-II	Military grade				450 MHz	BGA	DDR	1.8000 V	Synchronous	8 MWords	18 Bit	表面贴装	有	450 MHz	+ 125 C	1.9 V	- 55 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+		Tray	GS81302T20E				SigmaDDR-II+				Memory & Data Storage												144 Mbit					Pipelined	8 M x 18				23 Bit	SRAM	144 Mbit		Military							SRAM
GS8162Z36DD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	333 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	Commercial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	0 to 85 °C		GS8162Z36DD																				18 Mbit	4		260 mA, 315 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit		18 Mbit		Commercial
GS88236CGB-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	256 kWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	42	1.7 V	-40 to 85 °C	Tray	GS88236CGB				SCD/DCD Pipeline/Flow Through				Memory & Data Storage												9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit		Industrial							SRAM
GS8644Z18E-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	15	1.7 V	-40 to 85 °C	Tray	GS8644Z18E				NBT				Memory & Data Storage												72 Mbit	2		275 mA, 350 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit		Industrial							SRAM
GS864236B-167I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				125@Flow-Through/167@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	167 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	-40 to 85 °C	Tray	GS864236B				SCD/DCD Pipeline/Flow Through				Memory & Data Storage												72 Mbit	4		240 mA, 290 mA	8 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit		Industrial							SRAM
GS88236CGB-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	256 kWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	42	1.7 V	0 to 70 °C	Tray	GS88236CGB				SCD/DCD Pipeline/Flow Through				Memory & Data Storage												9 Mbit	4		140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit	SRAM	9 Mbit		Commercial							SRAM
GS8162Z36DD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	375 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				238@Flow-Through/375@Pipelined MHz	FBGA	SDR	-40 to 100 °C		GS8162Z36DD																				18 Mbit	4		290 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36				19 Bit		18 Mbit		Industrial