N/A

-

BGA-165

165

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

350 MHz

+ 85 C

DDR

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

Industrial grade

-40 to 100 °C

Tray

GS8342TT10BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

575 mA

0.45

4 M x 9

SRAM

36

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8162Z36DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

1.7 V

42

0 C

2.7 V

+ 70 C

150 MHz

有

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

SDR

N

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS88236CB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS881E18CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

165 mA, 220 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

Memory & Data Storage

114 Mbit

2

1.01 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

165

2.7, 3.6 V

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

-40 to 85 °C

4.2@Flow-Through/2.5

18

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881Z18CGD

NBT

Memory & Data Storage

9 Mbit

1

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

Details

SyncBurst

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS864218GB-200I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS864218GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

225 mA, 290 mA

7.5 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342R08BGD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

400 MHz

-40 to 100 °C

Tray

GS8342R08BGD

3A991.B.2.B

SigmaDDR-II B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

610 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.225 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

YES

119

119

256000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS840H18AGB-180

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

BGA,

网格排列

3

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

256KX18

2.19 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

119

119

BGA, BGA119,7X17,50

网格排列

3

128000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

8 ns

85 °C

无

GS840H36AB-180I

180 MHz

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

INDUSTRIAL

SYNCHRONOUS

0.345 mA

128KX36

3-STATE

2.19 mm

36

0.03 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q37BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

1.095 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

12 Weeks

YES

165

165

10

GSI技术

GSI技术

SigmaQuad-II+

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302D07E-333I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

-40 to 100 °C

Tray

GS81302D07E

无

3A991.B.2.B

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

2

SYNCHRONOUS

Pipelined

16MX8

1.5 mm

8

22 Bit

SRAM

144 Mbit

134217728 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662D38BD-500

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.48

BGA

Commercial grade

500 MHz

QDR

1.8000 V

1.7 V

Synchronous

0 to 85 °C

Tray

GS8662D38BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.16 A

Pipelined

2 M x 36

1.4 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

GS8642Z18GB

72 Mbit

2

230 mA, 315 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

72 Mbit

Commercial

N/A

-

165

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

20 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS88132CD

同步突发

Memory & Data Storage

9 Mbit

1

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 85 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161E18DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

200 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

0 to 70 °C

Tray

GS88236CGB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

125 mA, 150 mA

6.5@Flow-Through/3@P

256 k x 36

SRAM

9

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

0 to 85 °C

Tray

GS81302D07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

890 mA

0.45

16 M x 8

SRAM

144

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

GS8662DT10BD

72 Mbit

2

640 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Industrial

N/A

-

10 Weeks

BGA-165

YES

165

165

表面贴装

400 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

有

GS8161E18DGD-400I

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

-40 to 85 °C

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

无

GS8162Z36DB-400I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 100 °C

Tray

GS8162Z36DB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

1.99 mm

36

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm