N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

表面贴装

1.9 V

Industrial grade

-40 to 85 °C

1

Pipelined

20 Bit

18 Mbit

Industrial

N/A

-

8 Weeks

BGA-165

YES

165

165

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS881E36CD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 70 °C

Tray

GS881E36CD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS882Z36CGD

NBT

Memory & Data Storage

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D38BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

1.225 A

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS864236GB-167

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

167 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

0 to 70 °C

GS864236GB

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2MX36

1.99 mm

36

21 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

GSI技术

NBT SRAM

SDR

Industrial grade

FBGA

SDR

表面贴装

2.7, 3.6 V

18 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS8161Z18DD

NBT

Memory & Data Storage

18 Mbit

2

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS881Z36CGD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS881Z36CGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS832236AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

260 mA, 315 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

0 to 85 °C

144 Mbit

1

895 mA

Pipelined

4 M x 36

21 Bit

144 Mbit

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

表面贴装

2.7, 3.6 V

36 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

222.2@Flow-Through/333@Pipelined MHz

有

333 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

0 to 85 °C

Tray

GS8160E36DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302S36GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

915 mA

Pipelined

4 M x 36

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

238@Flow-Through/375.9@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320E32AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Details

DDR-II

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

0 to 85 °C

Tray

GS81302TT19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

895 mA

0.45

8 M x 18

SRAM

144

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302TT37GE-350I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

350 MHz

FBGA

DDR

-40 to 100 °C

Tray

GS81302TT37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

1

SYNCHRONOUS

905 mA

Pipelined

4 M x 36

1.5 mm

36

21 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT37BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

860 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662R18BD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

125@Flow-Through/166@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

72 Bit

2, 2.7 V

有

166 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

-40 to 85 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

235 mA, 300 mA

8@Flow-Through/3.5@P

512 k x 72

19 Bit

SRAM

36

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

有

225 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36GE-225I

225 MHz

2097152 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

153.8@Flow-Through/225@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

36 Bit

-40 to 85 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

295 mA, 405 mA

6.5@Flow-Through/2.7

2 M x 36

3-STATE

1.5 mm

36

SRAM

0.16 A

72

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT10BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

580 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

0 to 85 °C

144 Mbit

1

1.19 A

Pipelined

4 M x 36

21 Bit

144 Mbit

Commercial

N/A

-

BGA-165

165

153.8@Flow-Through/200@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

200 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

0 to 70 °C

Tray

GS8644Z36E

NBT

Memory & Data Storage

72 Mbit

270 mA, 345 mA

6.5@Flow-Through/3@P

2 M x 36

SRAM

72

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT38BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

1.16 A

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

活跃

GS8662TT

Tray

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662TT38BGD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

-40 to 100 °C

Tray

GS8662TT38BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

500 MHz

995 mA

SRAM

Parallel

Pipelined

2 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

72 Mbit

0.285 A

75497472 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

2M x 36

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

9 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342D11BGD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

795 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

36 Mbit

0.25 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无