品牌是'GSI' (10000)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 建筑学 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 产品类别 | 长度 | 宽度 | |||||||||||||||||||||||||||||||||||||||||||||
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![]() | GS8662DT37BGD-300 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | Details | DDR | Commercial grade | 300 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 2 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 300 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | 0 to 85 °C | Tray | GS8662DT37BGD | SigmaQuad-II+ B4 | Memory & Data Storage | 72 Mbit | 2 | 735 mA | Pipelined | 2 M x 36 | 19 Bit | SRAM | 72 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS882Z18CGB-250IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-119 | 119 | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 512 kWords | 18 Bit | 2, 2.7 V | 表面贴装 | 250 MHz | + 85 C | 2.7 V | - 40 C | 1.7 V | SMD/SMT | Parallel | Industrial grade | 181.8@Flow-Through/250@Pipelined MHz | FBGA | SDR | -40 to 85 °C | GS882Z18CGB | 9 Mbit | 2 | 145 mA, 185 mA | 5.5 ns | Flow-Through/Pipelined | 512 k x 18 | 18 Bit | 9 Mbit | Industrial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS864418GE-133I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | Industrial grade | 117.6@Flow-Through/133@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 4 MWords | 18 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 133 MHz | + 85 C | 3.6 V | - 40 C | 15 | 2.3 V | -40 to 85 °C | Tray | GS864418GE | 同步突发 | Memory & Data Storage | 72 Mbit | 2 | 235 mA, 285 mA | 8.5 ns | Flow-Through/Pipelined | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D08E-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | N | QDR-II | Commercial grade | 250 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 250 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | 0 to 85 °C | Tray | GS81302D08E | SigmaQuad-II | Memory & Data Storage | 144 Mbit | 2 | 700 mA | Pipelined | 16 M x 8 | 22 Bit | SRAM | 144 Mb | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321Z18AD-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | GSI技术 | NBT SRAM | SDR | Industrial grade | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 2 MWords | 18 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 333 MHz | + 100 C | 3.6 V | - 40 C | 18 | 2.3 V | SMD/SMT | Parallel | GSI技术 | -40 to 100 °C | Tray | GS8321Z18AD | NBT | Memory & Data Storage | 36 Mbit | 2 | 255 mA, 340 mA | 4.5 ns | Flow-Through/Pipelined | 2 M x 18 | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662QT07BGD-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | 表面贴装 | 333 MHz | + 70 C | 1.9 V | 0 C | 1.7 V | SMD/SMT | Parallel | LBGA, | GRID ARRAY, LOW PROFILE | 3 | 8000000 | PLASTIC/EPOXY | 未说明 | 0.45 ns | 70 °C | 有 | GS8662QT07BGD-333 | 1.8 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.22 | BGA | Commercial grade | 333 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 8 Bit | 1.9 V | 0 to 85 °C | e1 | 有 | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 8542.32.00.41 | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B165 | COMMERCIAL | 72 Mbit | 2 | SYNCHRONOUS | 920 mA | Pipelined | 8 M x 8 | 1.4 mm | 8 | 22 Bit | 72 Mbit | 67108864 bit | Commercial | PARALLEL | QDR SRAM | 1.9 V | 1.7 V | 15 mm | 13 mm | |||||||||||||||||||||||||
![]() | GS81302D08E-300 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SigmaQuad-II | N | QDR-II | Commercial grade | 表面贴装 | 8 Bit | 16 MWords | Synchronous | 1.8000 V | QDR | FBGA | 300 MHz | 有 | 300 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | 0 to 85 °C | Tray | GS81302D08E | SigmaQuad-II | Memory & Data Storage | 144 Mbit | 2 | 815 mA | Pipelined | 16 M x 8 | 22 Bit | SRAM | 144 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302R09E-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.8000 V | 1.7 V | Synchronous | 9 Bit | 1.9 V | 有 | 333 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II | DDR-II | FBGA | -40 to 100 °C | Tray | GS81302R09E | SigmaDDR-II B4 | Memory & Data Storage | 144 Mbit | 765 mA | 0.45 | 16 M x 9 | SRAM | 144 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321Z32AD-150IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | 32 Bit | 2, 2.7 V | 表面贴装 | 150 MHz | + 85 C | 2.7 V | - 40 C | 1.7 V | SMD/SMT | Parallel | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 1000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 7.5 ns | 85 °C | 无 | GS8321Z32AD-150IV | 150 MHz | 1.8 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.16 | BGA | Industrial grade | 133.3@Flow-Through/150@Pipelined MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 1 MWords | -40 to 100 °C | GS8321Z32AD | e0 | 无 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 1.8/2.5 V | INDUSTRIAL | 36 Mbit | 4 | SYNCHRONOUS | 220 mA, 230 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | 36 Mbit | 0.04 A | 33554432 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 2 V | 1.7 V | 15 mm | 13 mm | ||||||||||||||
![]() | GS81302D08GE-300 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | Details | QDR-II | Commercial grade | 300 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 300 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | 0 to 85 °C | Tray | GS81302D08GE | SigmaQuad-II | Memory & Data Storage | 144 Mbit | 2 | 815 mA | Pipelined | 16 M x 8 | 22 Bit | SRAM | 144 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662D19BGD-350I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 18 Bit | 1.9 V | 表面贴装 | 350 MHz | + 85 C | 1.9 V | - 40 C | 1.7 V | SMD/SMT | Parallel | Industrial grade | 350 MHz | FBGA | QDR | -40 to 100 °C | 72 Mbit | 2 | 705 mA | Pipelined | 4 M x 18 | 20 Bit | 72 Mbit | Industrial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8320E32AGT-200IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | TQFP-100 | 100 | + 85 C | 2.7 V | - 40 C | 18 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | , | 有 | GS8320E32AGT-200IV | 活跃 | GSI TECHNOLOGY | 5.8 | Industrial grade | 200 MHz | TQFP | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 1 MWords | 32 Bit | 2, 2.7 V | 表面贴装 | 有 | 200 MHz | -40 to 85 °C | Tray | GS8320E32AGT | DCD Synchronous Burst | Memory & Data Storage | compliant | 36 Mbit | 4 | 235 mA, 270 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 32 | SRAM | 36 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8161E36DGT-400I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | TQFP-100 | 100 | + 85 C | 3.6 V | - 40 C | 36 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | , | 有 | GS8161E36DGT-400I | 活跃 | GSI TECHNOLOGY | 5.8 | Industrial grade | 400 MHz | TQFP | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 512 kWords | 36 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 400 MHz | -40 to 70 °C | Tray | GS8161E36DGT | DCD Pipeline/Flow Through | Memory & Data Storage | compliant | 18 Mbit | 4 | 300 mA, 385 mA | 4 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS840H36AGB-166I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | YES | 119 | 119 | 128000 | PLASTIC/EPOXY | -40 °C | 未说明 | 8.5 ns | 85 °C | 有 | GS840H36AGB-166I | 131072 words | 3.3 V | BGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.28 | BGA | BGA, | 网格排列 | 3 | e1 | 有 | 3A991.B.2.B | 锡银铜 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | R-PBGA-B119 | 不合格 | INDUSTRIAL | SYNCHRONOUS | 128KX36 | 2.19 mm | 36 | 4.5 | PARALLEL | 缓存SRAM | 3.6 V | 3 V | 22 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662D11BGD-450I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | Details | DDR | Industrial grade | 450 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 450 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | -40 to 100 °C | Tray | GS8662D11BGD | SigmaQuad-II+ | Memory & Data Storage | 72 Mbit | 2 | 830 mA | Pipelined | 8 M x 9 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662QT10BD-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | N | DDR | Commercial grade | 250 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 250 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | 0 to 85 °C | Tray | GS8662QT10BD | SigmaQuad-II+ B2 | Memory & Data Storage | 72 Mbit | 2 | 720 mA | Pipelined | 8 M x 9 | 22 Bit | SRAM | 72 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8342QT10BD-357I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | DDR | Industrial grade | 357 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 357 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | -40 to 100 °C | Tray | GS8342QT10BD | SigmaQuad-II+ B2 | Memory & Data Storage | 36 Mbit | 2 | 955 mA | Pipelined | 4 M x 9 | 21 Bit | SRAM | 36 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8128418B-167 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | BGA-119 | YES | 119 | 119 | 2.3, 3 V | Synchronous | 8 MWords | 18 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 167 MHz | + 70 C | 3.6 V | 0 C | 10 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | N | SDR | BGA, | 网格排列 | 8000000 | PLASTIC/EPOXY | 未说明 | 8 ns | 70 °C | 无 | GS8128418B-167 | 2.5 V | BGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | BGA | 5.22 | Commercial grade | 125@Flow-Through/167@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 0 to 70 °C | Tray | GS8128418B | e0 | 无 | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1.27 mm | compliant | R-PBGA-B119 | 不合格 | COMMERCIAL | 144 Mbit | 2 | SYNCHRONOUS | 315 mA, 365 mA | 8 ns | Flow-Through/Pipelined | 8 M x 18 | 1.99 mm | 18 | 23 Bit | SRAM | 144 Mbit | 150994944 bit | Commercial | PARALLEL | 缓存SRAM | 2.7 V | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||
![]() | GS882Z36CGD-200IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 256 kWords | 36 Bit | 2, 2.7 V | 表面贴装 | 有 | 200 MHz | + 85 C | 2.7 V | - 40 C | 66 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | Details | SDR | LBGA, | GRID ARRAY, LOW PROFILE | 3 | 256000 | PLASTIC/EPOXY | -40 °C | 未说明 | 6.5 ns | 85 °C | 有 | GS882Z36CGD-200IV | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.14 | BGA | Industrial grade | 153.8@Flow-Through/200@Pipelined MHz | FBGA | -40 to 85 °C | Tray | GS882Z36CGD | e1 | 有 | 3A991.B.2.B | NBT | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | INDUSTRIAL | 9 Mbit | 4 | SYNCHRONOUS | 145 mA, 170 mA | 6.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.4 mm | 36 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Industrial | PARALLEL | ZBT SRAM | 2 V | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||
![]() | GS8662DT20BGD-450 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | Details | DDR | Commercial grade | 450 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 18 Bit | 1.9 V | 表面贴装 | 有 | 450 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | 0 to 85 °C | Tray | GS8662DT20BGD | SigmaQuad-II+ | Memory & Data Storage | 72 Mbit | 2 | 820 mA | Pipelined | 4 M x 18 | 20 Bit | SRAM | 72 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662TT37BD-400 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | N | DDR | Commercial grade | 400 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 2 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 400 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | 0 to 85 °C | Tray | GS8662TT37BD | SigmaDDR-II+ B2 | Memory & Data Storage | 72 Mbit | 1 | 800 mA | Pipelined | 2 M x 36 | 20 Bit | SRAM | 72 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321Z32AD-333IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 1 MWords | 32 Bit | 2, 2.7 V | 表面贴装 | 有 | 333 MHz | + 85 C | 2.7 V | - 40 C | 18 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | SDR | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 1000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 5 ns | 85 °C | 无 | GS8321Z32AD-333IV | 333 MHz | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.16 | BGA | Industrial grade | 200@Flow-Through/333@Pipelined MHz | FBGA | -40 to 100 °C | Tray | GS8321Z32AD | e0 | 无 | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 1.8/2.5 V | INDUSTRIAL | 36 Mbit | 4 | SYNCHRONOUS | 290 mA, 375 mA | 5 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 33554432 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 2 V | 1.7 V | SRAM | 15 mm | 13 mm | |||||
![]() | GS832272C-133V | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-209 | YES | 209 | 209 | LBGA, | GRID ARRAY, LOW PROFILE | 512000 | PLASTIC/EPOXY | 8.5 ns | 70 °C | 无 | GS832272C-133V | 524288 words | 1.8 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.14 | BGA | 117.6@Flow-Through/133@Pipelined MHz | FBGA | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 72 Bit | 2, 2.7 V | 133 MHz | + 70 C | 2.7 V | 0 C | 1.7 V | SMD/SMT | Parallel | 0 to 70 °C | GS832272C | 无 | 3A991.B.2.B | FLOW-THROUGH OR PIELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | 未说明 | R-PBGA-B209 | 不合格 | COMMERCIAL | 36 Mbit | SYNCHRONOUS | 210 mA, 235 mA | 8.5@Flow-Through/4@P | 512 k x 72 | 1.7 mm | 72 | 19 Bit | 36 | PARALLEL | 缓存SRAM | 2 V | 1.7 V | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||
![]() | GS832272C-250V | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-209 | 209 | SyncBurst | N | SDR | Commercial grade | 153.8@Flow-Through/250@Pipelined MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 512 kWords | 72 Bit | 2, 2.7 V | 表面贴装 | 有 | 250 MHz | + 70 C | 0 C | 14 | SMD/SMT | Parallel | GSI技术 | GSI技术 | 0 to 70 °C | Tray | GS832272C | 同步突发 | Memory & Data Storage | 36 Mbit | 8 | 275 mA, 380 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 72 | 19 Bit | SRAM | 36 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302DT11GE-500 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.8000 V | 1.7 V | Synchronous | 9 Bit | 1.9 V | 有 | 500 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | Details | QDR-II | Commercial grade | 0 to 85 °C | Tray | GS81302DT11GE | SigmaQuad-II+ | Memory & Data Storage | 144 Mbit | 1.26 A | 0.45 | 16 M x 9 | SRAM | 144 | Commercial | SRAM |
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