品牌是'GSI' (10000)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

包装/外壳

表面安装

引脚数

终端数量

操作温度

包装

系列

JESD-609代码

无铅代码

ECCN 代码

类型

端子表面处理

附加功能

HTS代码

子类别

技术

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

内存大小

端口的数量

操作模式

电源电流-最大值

访问时间

建筑学

组织结构

输出特性

座位高度-最大

内存宽度

地址总线宽度

产品类别

密度

待机电流-最大值

记忆密度

筛选水平

并行/串行

I/O类型

内存IC类型

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

产品类别

长度

宽度

GS8662DT37BGD-300
GS8662DT37BGD-300
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT37BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

GS882Z18CGB-250IV
GS882Z18CGB-250IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

-40 to 85 °C

GS882Z18CGB

9 Mbit

2

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

GS864418GE-133I
GS864418GE-133I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

133 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

-40 to 85 °C

Tray

GS864418GE

同步突发

Memory & Data Storage

72 Mbit

2

235 mA, 285 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

GS81302D08E-250
GS81302D08E-250
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D08E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mb

Commercial

SRAM

GS8321Z18AD-333I
GS8321Z18AD-333I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

GSI技术

NBT SRAM

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

333 MHz

+ 100 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS8321Z18AD

NBT

Memory & Data Storage

36 Mbit

2

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

SRAM

36 Mbit

Industrial

SRAM

GS8662QT07BGD-333
GS8662QT07BGD-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

GS8662QT07BGD-333

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

0 to 85 °C

e1

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

920 mA

Pipelined

8 M x 8

1.4 mm

8

22 Bit

72 Mbit

67108864 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

GS81302D08E-300
GS81302D08E-300
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SigmaQuad-II

N

QDR-II

Commercial grade

表面贴装

8 Bit

16 MWords

Synchronous

1.8000 V

QDR

FBGA

300 MHz

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302D08E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

GS81302R09E-333I
GS81302R09E-333I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

FBGA

-40 to 100 °C

Tray

GS81302R09E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

765 mA

0.45

16 M x 9

SRAM

144

SRAM

GS8321Z32AD-150IV
GS8321Z32AD-150IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

32 Bit

2, 2.7 V

表面贴装

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

7.5 ns

85 °C

GS8321Z32AD-150IV

150 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

-40 to 100 °C

GS8321Z32AD

e0

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

GS81302D08GE-300
GS81302D08GE-300
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D08GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

GS8662D19BGD-350I
GS8662D19BGD-350I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

QDR

-40 to 100 °C

72 Mbit

2

705 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Industrial

GS8320E32AGT-200IV
GS8320E32AGT-200IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

TQFP-100

100

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

,

GS8320E32AGT-200IV

活跃

GSI TECHNOLOGY

5.8

Industrial grade

200 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

200 MHz

-40 to 85 °C

Tray

GS8320E32AGT

DCD Synchronous Burst

Memory & Data Storage

compliant

36 Mbit

4

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

SRAM

36 Mbit

Industrial

SRAM

GS8161E36DGT-400I
GS8161E36DGT-400I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

10 Weeks

TQFP-100

100

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

,

GS8161E36DGT-400I

活跃

GSI TECHNOLOGY

5.8

Industrial grade

400 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

400 MHz

-40 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

compliant

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS840H36AGB-166I
GS840H36AGB-166I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

YES

119

119

128000

PLASTIC/EPOXY

-40 °C

未说明

8.5 ns

85 °C

GS840H36AGB-166I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

BGA

BGA,

网格排列

3

e1

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

128KX36

2.19 mm

36

4.5

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

GS8662D11BGD-450I
GS8662D11BGD-450I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D11BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

GS8662QT10BD-250
GS8662QT10BD-250
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662QT10BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

720 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8342QT10BD-357I
GS8342QT10BD-357I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342QT10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

955 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8128418B-167
GS8128418B-167
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

10 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

GS8128418B-167

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

BGA

5.22

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8128418B

e0

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

GS882Z36CGD-200IV
GS882Z36CGD-200IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

GS882Z36CGD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS882Z36CGD

e1

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

GS8662DT20BGD-450
GS8662DT20BGD-450
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8662TT37BD-400
GS8662TT37BD-400
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT37BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

800 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8321Z32AD-333IV
GS8321Z32AD-333IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5 ns

85 °C

GS8321Z32AD-333IV

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8321Z32AD

e0

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

SRAM

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

GS832272C-133V
GS832272C-133V
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-209

YES

209

209

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

8.5 ns

70 °C

GS832272C-133V

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

117.6@Flow-Through/133@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

72 Bit

2, 2.7 V

133 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

0 to 70 °C

GS832272C

3A991.B.2.B

FLOW-THROUGH OR PIELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

未说明

R-PBGA-B209

不合格

COMMERCIAL

36 Mbit

SYNCHRONOUS

210 mA, 235 mA

8.5@Flow-Through/4@P

512 k x 72

1.7 mm

72

19 Bit

36

PARALLEL

缓存SRAM

2 V

1.7 V

22 mm

14 mm

GS832272C-250V
GS832272C-250V
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-209

209

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

250 MHz

+ 70 C

0 C

14

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 70 °C

Tray

GS832272C

同步突发

Memory & Data Storage

36 Mbit

8

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

GS81302DT11GE-500
GS81302DT11GE-500
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

500 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

0 to 85 °C

Tray

GS81302DT11GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

1.26 A

0.45

16 M x 9

SRAM

144

Commercial

SRAM