GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8342DT38BD-550	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	550 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	85 °C	无	GS8342DT38BD-550	550 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Commercial grade	550 MHz	FBGA	0 to 85 °C	Tray	GS8342DT38BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)			Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	OTHER	36 Mbit	2	SYNCHRONOUS	1.225 A		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8662D07BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				350 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662D07BGD				SigmaQuad-II+ B4				Memory & Data Storage												72 Mbit	2		705 mA		Pipelined	8 M x 8				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS81302D19E-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	10	0 C	1.9 V	+ 70 C	350 MHz	有	Commercial grade				350 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	QDR-II	N	SigmaQuad-II+	GSI技术	GSI技术	Parallel	SMD/SMT	0 to 85 °C	Tray	GS81302D19E				SigmaQuad-II+ B4				Memory & Data Storage												144 Mbit	2		940 mA		Pipelined	8 M x 18				21 Bit	SRAM	144 Mbit			Commercial							SRAM
GS88218CGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Details	SDR	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Industrial grade				200@Flow-Through/300@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	-40 to 85 °C	Tray	GS88218CGD				Pipeline/Flow Through				Memory & Data Storage												9 Mbit	2		170 mA, 225 mA	5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Industrial							SRAM
GS81302TT10GE-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	+ 70 C	350 MHz	有	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	Synchronous	16 MWords	9 Bit	表面贴装	DDR-II	Details	SigmaDDR-II+	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	10	0 C	1.9 V	0 to 85 °C	Tray	GS81302TT10GE				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		800 mA		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Commercial							SRAM
GS81302T07GE-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade				350 MHz	表面贴装	1.9 V	8 Bit	16 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	有	350 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302T07GE				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		800 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8644Z18E-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	4 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	15	2.3 V	0 to 70 °C	Tray	GS8644Z18E				NBT				Memory & Data Storage												72 Mbit	2		250 mA, 315 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Commercial							SRAM
GS864236B-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	BGA,	网格排列	3	2000000	PLASTIC/EPOXY	-40 °C	BGA	5.17	GSI TECHNOLOGY	活跃	RECTANGULAR	BGA	2.5 V	GS864236B-250I	无	85 °C	6.5 ns	未说明	Industrial grade	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	-40 to 85 °C	Tray	GS864236B	e0	无	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	72 Mbit	4	SYNCHRONOUS	275 mA, 380 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36		1.99 mm	36		SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS81302T07GE-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302T07GE				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		755 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit			Commercial							SRAM
GS881Z18CGT-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	-40 to 85 °C	Tray	GS881Z18CGT				NBT				Memory & Data Storage												9 Mbit	1		145 mA, 185 mA	5.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Industrial							SRAM
GS8662T11BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8662T11BD-400I	8388608 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.5	BGA	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	LBGA,		Tray	GS8662T11BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit		SYNCHRONOUS	635 mA			8 M x 9		1.4 mm	9		SRAM			72		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS816136DGT-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	QFP,	FLATPACK	512000	PLASTIC/EPOXY	未说明	4 ns	70 °C	有	GS816136DGT-400	2.5 V	QFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	QFP	Commercial grade	250@Flow-Through/400@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	0 to 70 °C	Tray	GS816136DGT			3A991.B.2.B	Pipeline/Flow Through		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1		compliant	R-PQFP-G100			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 36			36	19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM
GS882Z36CGB-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	333 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	Commercial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	0 to 70 °C		GS882Z36CGB																				9 Mbit	4		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit		9 Mbit			Commercial
GS8322Z36AD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	4.5 ns	85 °C	无	GS8322Z36AD-333I	333 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Industrial grade	222.2@Flow-Through/333@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS8322Z36AD	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	4	SYNCHRONOUS	280 mA, 365 mA	4.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8662Q07BGD-357I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				357 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	357 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662Q07BGD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		995 mA		Pipelined	8 M x 8				22 Bit	SRAM	72 Mbit			Industrial							SRAM
GS81302T38GE-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302T38GE				SigmaDDR-II+				Memory & Data Storage												144 Mbit	1		995 mA		Pipelined	4 M x 36				21 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8342TT10BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaDDR-II+	N	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	9 Bit	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 70 °C	Tray	GS8342TT10BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		600 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8662TT06BGD-500I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				500 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	500 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662TT06BGD				SigmaQuad-II+				Memory & Data Storage												72 Mbit	1		770 mA		Pipelined	8 M x 8				22 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8322Z36AGD-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	14	1.7 V	-40 to 100 °C	Tray	GS8322Z36AGD				NBT				Memory & Data Storage												36 Mbit	4		260 mA, 315 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8673ET36BGK-625I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-260	YES	260	260	2 MWords	36 Bit	1.4 V	表面贴装	有	625 MHz	+ 100 C	1.4 V	- 40 C	8	1.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-IIIe	Details	DDR	HBGA,	GRID ARRAY, HEAT SINK/SLUG	2000000	PLASTIC/EPOXY	未说明	0.4 ns	有	GS8673ET36BGK-625I	1.35 V	HBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.74	Industrial grade	625/400 MHz	BGA	DDR	1.3500 V	1.3 V	Synchronous	-40 to 85 °C	Tray	GS8673ET36BGK			3A991.B.2.B	SigmaDDR-IIIe B2			8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B260				72 Mbit		SYNCHRONOUS	2.23 A		Pipelined	2 M x 36		2.3 mm	36		SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		DDR SRAM		1.4 V	1.3 V	SRAM	22 mm	14 mm
GS8342DT19BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342DT19BD-400I	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Industrial grade	400 MHz	FBGA	-40 to 100 °C	Tray	GS8342DT19BD	e0	无	3A991.B.2.B	SigmaQuad-II+ B4	Tin/Lead (Sn/Pb)			Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	715 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	19 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS816236DGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	4.5 ns	85 °C	有	GS816236DGD-333I	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Industrial grade	222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	-40 to 100 °C	Tray	GS816236DGD			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit	4	SYNCHRONOUS	280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36		1.4 mm	36	19 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8642Z18GB-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				133.3@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	0 to 70 °C	Tray	GS8642Z18GB				NBT Pipeline/Flow Through				Memory & Data Storage												72 Mbit	2		205 mA, 270 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8342T37BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342T37BD-400	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Commercial grade	400 MHz	FBGA	0 to 85 °C	Tray	GS8342T37BD	e0		3A991.B.2.B	SigmaDDR-II+ B2	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	1	SYNCHRONOUS	770 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.215 A	37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342TT19BGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT19BGD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		600 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial							SRAM