N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

DDR

-40 to 100 °C

144 Mbit

2

905 mA

Pipelined

4 M x 36

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

表面贴装

2, 2.7 V

18 Bit

512 kWords

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS881E18CD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

SDR

Details

SyncBurst

GSI技术

GSI技术

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

85 °C

有

GS832136AGD-333

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS832136AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

165

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

21 Bit

72 Mbit

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

0 to 85 °C

Tray

GS8160Z18DGT

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

4 ns

有

GS832018AGT-400I

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

400 MHz

-40 to 100 °C

3A991.B.2.B

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

2

SYNCHRONOUS

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

1.6 mm

18

21 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

5 ns

无

GS832118AD-333IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.7

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 100 °C

Tray

GS832118AD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

2

SYNCHRONOUS

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

QDR

-40 to 100 °C

GS8342DT19BGD

36 Mbit

2

675 mA

Pipelined

2 M x 18

19 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

9 Bit

0 to 85 °C

GS8662D09BGD

72 Mbit

2

580 mA

Pipelined

8 M x 9

72 Mbit

Commercial

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662DT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

890 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS88218CGD-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords/kB

-40 to 85 °C

Tray

GS88218CGD

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

512 k x 18

1.4 mm

18

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

133 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

4

255 mA, 305 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

10 ns

85 °C

有

GS840H18AGT-150I

150 MHz

262144 words

3.3 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.45

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

SYNCHRONOUS

0.29 mA

256KX18

3-STATE

1.6 mm

18

0.03 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

142.8@Flow-Through/225@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

225 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

-40 to 85 °C

Tray

GS8322Z72GC

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

8

265 mA, 370 mA

7 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 85 °C

Tray

GS81302TT38GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP,

网格排列

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS88132CD-200V

262144 words

1.8 V

LQFP

RECTANGULAR

GS88132CD

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

125 mA, 150 mA

6.5 ns

256 k x 32

1.4 mm

32

9

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

100

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Commercial grade

0 to 85 °C

2

Flow-Through/Pipelined

21 Bit

36 Mbit

Commercial

N/A

-

8 Weeks

YES

119

119

未说明

12 ns

70 °C

有

GS840H36AGB-100

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

BGA

BGA,

网格排列

3

128000

PLASTIC/EPOXY

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

128KX36

2.19 mm

36

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

357 MHz

Commercial grade

Parallel

SMD/SMT

1.7 V

0 C

1.9 V

+ 70 C

357 MHz

FBGA

QDR

0 to 85 °C

GS8662Q08BGD

72 Mbit

2

985 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

TQFP-100

YES

100

100

3.3000 V

3 V

Synchronous

4 MWords

18 Bit

3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS864018GT-167

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

0 to 70 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

260

Synchronous

4 MWords

18 Bit

1.4 V

表面贴装

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

Details

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

有

GS8673ET18BGK-625

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Commercial grade

625/400 MHz

BGA

DDR

1.3500 V

1.3 V

0 to 70 °C

Tray

GS8673ET18BGK

3A991.B.2.B

SigmaDDR-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

1.65 A

Pipelined

4 M x 18

2.3 mm

18

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

NBT SRAM

Details

SDR

有

333 MHz

+ 85 C

3.6 V

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 85 °C

Tray

GS882Z18CGD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342QT19BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

333 MHz

0 to 85 °C

Tray

GS8342QT19BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

885 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662T11BD-450I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.5

BGA

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Tray

GS8662T11BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

705 mA

Pipelined

8 M x 9

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm