N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8662R08BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

0 to 85 °C

Tray

GS8320Z18AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

375 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

238@Flow-Through/375@Pipelined MHz

-40 to 100 °C

GS8162Z18DGD

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662Q09BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

930 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

36 Bit

2.7, 3.6 V

有

300 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

2.2 ns

85 °C

无

GS88237CB-300I

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

300 MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

Tray

GS88237CB

e0

无

3A991.B.2.B

SCD/DCD Pipeline

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

245 mA

2.2

256 k x 36

1.77 mm

36

SRAM

9

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS88218CGB-150IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

-40 to 85 °C

Tray

GS88218CGB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-209

209

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

285 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SigmaSIO DDR-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662S08BGD-350I

8388608 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.71

BGA

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8662S08BGD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

SYNCHRONOUS

705 mA

8 M x 8

1.4 mm

8

SRAM

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS8662DT19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

N

450 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

DDR

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662DT19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

820 mA

0.45

4 M x 18

SRAM

72

SRAM

N/A

-

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II+

Industrial grade

400 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302D07E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

有

GS88136CGD-300I

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS88136CGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

17 Bit

SRAM

9 Mbit

9437184 bit

Industrial

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

表面贴装

1.9 V

9 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

0 to 70 °C

Tray

GS864032GT

同步突发

Memory & Data Storage

72 Mbit

4

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Commercial

SRAM

N/A

-

165

Synchronous

8 MWords

8 Bit

表面贴装

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

2

Pipelined

72 Mbit

Industrial

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

表面贴装

1.9 V

18 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

450 MHz

有

450 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

9 Mbit

1

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

GSI技术

SyncBurst

Details

+ 70 C

3.6 V

0 C

36

2.3 V

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS816118DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

300 MHz

1.8000 V

1.7 V

8 MWords

9 Bit

1.9 V

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

-40 to 100 °C

Tray

GS8662Q10BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

860 mA

0.45

8 M x 9

SRAM

72

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8662R08BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8662QT37BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

1.06 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

225 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS864436E-225IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS864436E

无

3A991.B.2.B

同步突发

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.4 mm

36

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS8662DT11BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM