GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8662D08BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Details	DDR				250 MHz	FBGA	1.8000 V	1.9 V	8 Bit	8 MWords	Synchronous	1.7 V	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	-40 to 100 °C	Tray	GS8662D08BGD				SigmaQuad-II				Memory & Data Storage												72 Mbit			510 mA	0.45		8 M x 8					SRAM			72								SRAM
GS8342S18BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342S18BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		715 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS88118CGT-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	333 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	512000	UNSPECIFIED	未说明	70 °C	有	GS88118CGT-333	524288 words	3.3 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.28	QFP	2.7, 3.6 V	18 Bit	Synchronous	2.3, 3 V	2.5, 3.3 V	TQFP	222.2@Flow-Through/333@Pipelined MHz	有	0 to 70 °C	Tray	GS88118CGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-XQFP-G100	不合格		COMMERCIAL	9 Mbit		SYNCHRONOUS	165 mA, 220 mA	4.5@Flow-Through/2.5		512 k x 18		1.6 mm	18	19 Bit	SRAM			9		SERIAL		缓存SRAM		3.6 V	3 V	SRAM	20 mm	14 mm
GS88218CD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	SMD/SMT	-40 to 85 °C	Tray	GS88218CD				SCD/DCD Pipeline/Flow Through				Memory & Data Storage												9 Mbit	2		125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Industrial							SRAM
GS8161E32DD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	-40 to 85 °C	Tray	GS8161E32DD				DCD Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		290 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8342S08BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	DDR	SigmaSIO DDR-II	GSI技术	GSI技术	Parallel	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342S08BD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		715 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS840H32AGB-100I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	119	119	网格排列	BGA	5.21	GSI TECHNOLOGY	活跃	GSI技术	RECTANGULAR	BGA	3.3 V	131072 words	GS840H32AGB-100I	有	85 °C	12 ns	未说明	-40 °C	PLASTIC/EPOXY	128000	3			BGA,				e1	有	3A991.B.2.B		锡银铜	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL			SYNCHRONOUS				128KX32		2.19 mm	32					4194304 bit		PARALLEL		缓存SRAM		3.6 V	3 V		22 mm	14 mm
GS864236B-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	2.5, 3.3 V	2.3, 3 V	Synchronous	表面贴装	2.7, 3.6 V	36 Bit	2 MWords	有	300 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	BGA,	网格排列	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	5.5 ns	85 °C	无	GS864236B-300I	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.18	BGA	Industrial grade	181.8@Flow-Through/300@Pipelined MHz	FBGA	SDR	-40 to 85 °C	Tray	GS864236B	e0	无	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	72 Mbit	4	SYNCHRONOUS	320 mA, 440 mA	5.5 ns	Flow-Through/Pipelined	2 M x 36		1.99 mm	36	21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS832032AGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	32 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 100 °C	Tray	GS832032AGT				同步突发				Memory & Data Storage												36 Mbit	4		235 mA, 270 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8182T19BGD-435	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	165	165	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	有	GS8182T19BGD-435	435 MHz	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.46	BGA	Commercial grade		435 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	18 Bit	1.9 V	表面贴装	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	0 to 70 °C			e1	有	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL		1	SYNCHRONOUS	0.645 mA		Pipelined	1MX18	3-STATE	1.4 mm	18	19 Bit		18 Mbit	0.19 A	18874368 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V		15 mm	13 mm
GS864418GE-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	4000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS864418GE-200IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.15	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS864418GE	e1	有	3A991.B.2.B	同步突发	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	275 mA, 350 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18		1.4 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	17 mm	15 mm
GS8182T18BD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	375 MHz	FBGA	1.8000 V	Synchronous	18 Bit					-40 to 85 °C																										0.45										18
GS840H36AGT-180I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	100	100		LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	128000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	8 ns	85 °C	有	GS840H36AGT-180I	180 MHz	131072 words	3.3 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.34	QFP				e3	有	3A991.B.2.B		纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3,3.3 V	INDUSTRIAL			SYNCHRONOUS	0.345 mA			128KX36	3-STATE	1.6 mm	36				0.03 A	4.5		PARALLEL	COMMON	缓存SRAM	3.14 V	3.6 V	3 V		20 mm	14 mm
GS8321E36AD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8321E36AD				同步突发				Memory & Data Storage												36 Mbit	4		235 mA, 270 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8182R18BD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	165	165	未说明	0.45 ns	85 °C	无	GS8182R18BD-375I	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.19	BGA	Industrial grade		375 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	18 Bit	1.9 V	表面贴装	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	-40 to 85 °C			e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	R-PBGA-B165	不合格		INDUSTRIAL		1	SYNCHRONOUS			Pipelined	1MX18		1.4 mm	18	20 Bit		18 Mbit		18874368 bit	Industrial	PARALLEL		DDR SRAM		1.9 V	1.7 V		15 mm	13 mm
GS88132CD-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8, 2.5 V	1.7, 2.3 V	Synchronous	256 kWords	32 Bit	2, 2.7 V	表面贴装	250 MHz	+ 70 C	2.7 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	0 to 70 °C																						9 Mbit	1		140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit		9 Mbit			Commercial
GS816218DD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	Industrial grade					-40 to 100 °C																							2				Flow-Through/Pipelined					20 Bit		18 Mbit			Industrial
GS832036AGT-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	375 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	4.2 ns	有	GS832036AGT-375I	1048576 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.7	QFP	238@Flow-Through/375@Pipelined MHz	TQFP	2.5, 3.3 V	2.3, 3 V	Synchronous	36 Bit	2.7, 3.6 V	有	-40 to 100 °C	Tray	GS832036AGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 3.3; SYNCHRONOUS BURST		Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100	不合格			36 Mbit		SYNCHRONOUS	290 mA, 400 mA	4.2@Flow-Through/2.5		1 M x 36		1.6 mm	36		SRAM			36		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8322Z36AGD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	36 Bit	1 MWords	Synchronous	1.7, 2.3 V	1.8, 2.5 V	SDR	FBGA	153.8@Flow-Through/200@Pipelined MHz	有	200 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	6.5 ns	70 °C	有	GS8322Z36AGD-200V	200 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	表面贴装	2, 2.7 V	0 to 85 °C	Tray	GS8322Z36AGD			3A991.B.2.B	NBT		ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.8/2.5 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	1.7 V	2 V	1.7 V	SRAM	15 mm	13 mm
GS74117AX-8E	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-48	48	表面贴装	3.6 V	135	3 V	SMD/SMT	Parallel	GSI技术	GSI技术	N				FBGA	3.3000 V	3 V	Asynchronous	256 kWords	16 Bit	3.6 V	-40 to 125 °C		GS74117AX				Asynchronous				Memory & Data Storage												4 Mbit	1		130 mA	8 ns		256 k x 16				18 Bit	SRAM	4 Mbit			扩展工业							SRAM
GS8321E36AD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	333 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	5 ns	85 °C	无	GS8321E36AD-333V	1048576 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.81	BGA	Commercial grade	200@Flow-Through/333@Pipelined MHz	1.8, 2.5 V	1.7, 2.3 V	Synchronous	36 Bit	2, 2.7 V	有	0 to 85 °C	Tray	GS8321E36AD			3A991.B.2.B	同步突发		ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE		Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit		SYNCHRONOUS	270 mA, 355 mA	5@Flow-Through/3@Pip		1 M x 36		1.4 mm	36		SRAM			36	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS881E18CGD-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	66	1.7 V	0 to 70 °C	Tray	GS881E18CGD				DCD Pipeline/Flow Through				Memory & Data Storage												9 Mbit	2		125 mA, 165 mA	5.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Commercial							SRAM
GS840H36AGT-100I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	100	100		LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	128000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	12 ns	85 °C	有	GS840H36AGT-100I	100 MHz	131072 words	3.3 V	LQFP	RECTANGULAR	GSI技术	Obsolete	GSI TECHNOLOGY	5.69	QFP				e3	有	3A991.B.2.B		纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3,3.3 V	INDUSTRIAL			SYNCHRONOUS	0.2 mA			128KX36	3-STATE	1.6 mm	36				0.03 A	4718592 bit		PARALLEL	COMMON	缓存SRAM	3.14 V	3.6 V	3 V		20 mm	14 mm
GS81302DT37GE-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302DT37GE				SigmaQuad-II+ B4				Memory & Data Storage												144 Mbit	2		1.17 A		Pipelined	4 M x 36				20 Bit	SRAM	144 Mbit			Commercial							SRAM
GS81302TT38GE-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	400 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				400 MHz	FBGA	DDR	0 to 85 °C																						144 Mbit	1		995 mA		Pipelined	4 M x 36				21 Bit		144 Mbit			Commercial