N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

85 °C

无

GS8182T36BD-250I

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

512KX36

1.4 mm

36

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

70 °C

无

GS8321Z18AD-200V

200 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS8320E32AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT06GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

800 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS88236CB-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS88236CB

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

2.3 V

36

0 C

3.6 V

+ 70 C

375 MHz

有

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS8161Z18DGT

NBT

Memory & Data Storage

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

无

GS8321Z32AD-150V

150 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8321Z32AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

SRAM

36 Mbit

0.03 A

33554432 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

DDR

N

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

+ 70 C

500 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342T11BD-500

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

500 MHz

FBGA

0 to 85 °C

Tray

GS8342T11BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

730 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

0.24 A

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

9 Mbit

1

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

9 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

表面贴装

1.9 V

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T11GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

800 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR-II

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302TT19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.01 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Commercial grade

0 to 70 °C

1

Pipelined

20 Bit

18 Mbit

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS8640E18GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

85 °C

无

GS8182R18BD-333I

1048576 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.59

BGA

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

1MX18

1.4 mm

18

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342S36BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

915 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8321E32AGD

同步突发

Memory & Data Storage

36 Mbit

4

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D38GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.17 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

0 C

2.7 V

+ 70 C

150 MHz

有

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 to 70 °C

Tray

GS864418GE

同步突发

Memory & Data Storage

72 Mbit

2

225 mA, 275 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

YES

119

119

128000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS840H32AGB-180

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.29

BGA

BGA,

网格排列

3

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

128KX32

2.19 mm

32

4194304 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8162Z18DGD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mb

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

333 MHz

FBGA

DDR

-40 to 100 °C

GS8662T36BD

72 Mbit

1

695 mA

Pipelined

2 M x 36

21 Bit

72 Mbit

Industrial

N/A

-

6 Weeks

YES

48

48

GRID ARRAY, THIN PROFILE, FINE PITCH

3

256000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

8 ns

85 °C

有

GS74116AGX-8IT

262144 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.2

BGA

TFBGA, BGA48,6X8,30

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

ASYNCHRONOUS

0.14 mA

256KX16

3-STATE

1.2 mm

16

0.02 A

4

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

10 mm

6 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 100 °C

Tray

GS8162Z36DGD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA

5.18

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

1.8 V

GS8642Z36GB-250V

有

70 °C

6.5 ns

未说明

PLASTIC/EPOXY

2000000

3

网格排列

BGA,

Commercial grade

166.6@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8642Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

无

GS8321E32AD-200V

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.38

BGA

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

0 to 85 °C

GS8321E32AD

3A991.B.2.B

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1MX32

1.4 mm

32

20 Bit

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm