N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T09BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

300 MHz

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

表面贴装

1.9 V

9 Bit

0 to 85 °C

GS8662T10BGD

72 Mbit

1

495 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

-40 to 85 °C

Tray

GS8161E18DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

260 mA, 305 mA

4.5@Flow-Through/2.5

1 M x 18

SRAM

18

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

0 C

2.7 V

+ 70 C

有

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8640FZ18GT-6.5V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Commercial grade

153.8 MHz

TQFP

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS8640FZ18GT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662T10BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

无

GS832118AD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS832118AD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

YES

119

119

128000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

有

GS840H36AGB-100I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

BGA

BGA,

网格排列

3

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

128KX36

2.19 mm

36

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-260

260

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

Industrial grade

550/375 MHz

BGA

QDR

1.3500 V

1.25 V

Synchronous

2 MWords

36 Bit

1.4 V

表面贴装

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

-40 to 85 °C

Tray

GS8673ED36BGK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

2.67 A

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

表面贴装

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS881E18CD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

350 MHz

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

0 to 85 °C

Tray

GS8662D38BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

885 mA

0.45

2 M x 36

19 Bit

SRAM

72

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

DDR

SigmaDDR-II

GSI技术

GSI技术

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662T09BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Tray

GS8662T09BD

e0

无

3A991.B.2.B

SigmaDDR-II B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

435 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

22 Bit

SRAM

72 Mbit

0.215 A

75497472 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

-40 to 85 °C

Tray

GS8644Z18GE

NBT

Memory & Data Storage

72 Mbit

2

275 mA, 350 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mb

Industrial

SRAM

N/A

-

BGA-165

165

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

有

300 MHz

+ 85 C

-40 to 85 °C

Tray

GS882Z36CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

YES

165

165

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302D19GE-333

8388608 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS81302D19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

890 mA

8 M x 18

1.5 mm

18

SRAM

150994944 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

表面贴装

1.9 V

8 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

333 MHz

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT07BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

630 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Industrial grade

表面贴装

9 Bit

8 MWords

Synchronous

1.8000 V

QDR

FBGA

333 MHz

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662D09BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

640 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

915 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

300 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

0 to 70 °C

Tray

GS88237CGB

SCD/DCD Pipeline

Memory & Data Storage

9 Mbit

2

225 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

- 40 C

1.9 V

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

18 Bit

2 MWords

DDR

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

-40 to 100 °C

Tray

GS8342TT19BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

Synchronous

4 MWords

36 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302T37GE-350I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

BGA

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Tray

GS81302T37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

1

SYNCHRONOUS

905 mA

Pipelined

4 M x 36

1.5 mm

36

21 Bit

SRAM

144 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

-40 to 85 °C

Tray

GS8182S18BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

690 mA

0.45

1 M x 18

19 Bit

SRAM

18

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS864418GE-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS864418GE

e1

有

3A991.B.2.B

同步突发

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

250 mA, 310 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

1.4 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS864218B-167IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS864218B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

18

0 C

2.7 V

+ 70 C

250 MHz

有

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8321Z18AGD

NBT

Memory & Data Storage

36 Mbit

2

225 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM