GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度
GS816036DGT-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 100 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	4 ns	85 °C	有	GS816036DGT-400I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	QFP	Industrial grade	250@Flow-Through/400@Pipelined MHz	TQFP	SDR	-40 to 100 °C	Tray	GS816036DGT			3A991.B.2.B	Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			INDUSTRIAL	18 Mbit	4	SYNCHRONOUS	300 mA, 385 mA	4 ns	Flow-Through/Pipelined	512 k x 36		1.6 mm	36	20 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8662T20BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662T20BGD				SigmaQuad-II+				Memory & Data Storage												72 Mbit	1		590 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS81302T07GE-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302T07GE				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		755 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit			Commercial							SRAM
GS881Z18CGT-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	-40 to 85 °C	Tray	GS881Z18CGT				NBT				Memory & Data Storage												9 Mbit	1		145 mA, 185 mA	5.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Industrial							SRAM
GS8662T11BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8662T11BD-400I	8388608 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.5	BGA	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	LBGA,		Tray	GS8662T11BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit		SYNCHRONOUS	635 mA			8 M x 9		1.4 mm	9		SRAM			72		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS816136DGT-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	QFP,	FLATPACK	512000	PLASTIC/EPOXY	未说明	4 ns	70 °C	有	GS816136DGT-400	2.5 V	QFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	QFP	Commercial grade	250@Flow-Through/400@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	0 to 70 °C	Tray	GS816136DGT			3A991.B.2.B	Pipeline/Flow Through		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1		compliant	R-PQFP-G100			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 36			36	19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM
GS882Z36CGB-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	333 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	Commercial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	0 to 70 °C		GS882Z36CGB																				9 Mbit	4		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit		9 Mbit			Commercial
GS8322Z36AD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	4.5 ns	85 °C	无	GS8322Z36AD-333I	333 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Industrial grade	222.2@Flow-Through/333@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS8322Z36AD	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	4	SYNCHRONOUS	280 mA, 365 mA	4.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8662Q07BGD-357I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				357 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	357 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662Q07BGD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		995 mA		Pipelined	8 M x 8				22 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8342D37BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342D37BD-400	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Commercial grade	400 MHz	FBGA	0 to 85 °C	Tray	GS8342D37BD			3A991.B.2.B	SigmaQuad-II+ B4		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	905 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit	0.225 A	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8662D38BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				350 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	36 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662D38BD				SigmaQuad-II+				Memory & Data Storage												72 Mbit	2		885 mA		Pipelined	2 M x 36				19 Bit	SRAM	72 Mbit			Commercial							SRAM
GS832236AD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	Commercial grade					0 to 85 °C																							4				Flow-Through/Pipelined					20 Bit		36 Mbit			Commercial
GS8182T09BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	9 Bit	表面贴装	Industrial grade					400 MHz	FBGA	DDR	1.8000 V	Synchronous	2 MWords	-40 to 85 °C																							1				Pipelined							18 Mbit			Industrial
GS8182S18BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	1 MWords	18 Bit	1.9 V	表面贴装	400 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				400 MHz	FBGA	DDR	-40 to 85 °C		GS8182S18BD																				18 Mbit	2		730 mA		Pipelined	1 M x 18				19 Bit		18 Mbit			Industrial
GS81302S09E-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR-II	Industrial grade				250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	9 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302S09E				SigmaSIO DDR-II				Memory & Data Storage												144 Mbit	2		710 mA		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Industrial							SRAM
GS8640E18GT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				133.3@Flow-Through/200@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8640E18GT				DCD				Memory & Data Storage												72 Mbit	2		225 mA, 290 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8342D37BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342D37BGD-350I	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Industrial grade	350 MHz	-40 to 100 °C	Tray	GS8342D37BGD			3A991.B.2.B	SigmaQuad-II+ B4		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	860 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit	0.23 A	37748736 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8322Z18AB-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	BGA, BGA119,7X17,50	网格排列	2000000	PLASTIC/EPOXY	BGA119,7X17,50	-40 °C	未说明	4.2 ns	85 °C	无	GS8322Z18AB-375I	375 MHz	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	Industrial grade	238@Flow-Through/375@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS8322Z18AB	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	270 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8182R36BGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	512 kWords	36 Bit	1.9 V	表面贴装	Commercial grade					0 to 70 °C																							1				Pipelined					19 Bit		18 Mbit			Commercial
GS840H32AB-180I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	119	119	BGA			BGA, BGA119,7X17,50	网格排列	3	128000	PLASTIC/EPOXY	BGA119,7X17,50	-40 °C	未说明	8 ns	85 °C	无	GS840H32AB-180I	180 MHz	131072 words	3.3 V	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.29				e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	2.5/3.3,3.3 V	INDUSTRIAL			SYNCHRONOUS	0.345 mA			128KX32	3-STATE	2.19 mm	32				0.03 A	4194304 bit		PARALLEL	COMMON	缓存SRAM	3.14 V	3.6 V	3 V		22 mm	14 mm
GS8662D08BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Details	DDR				250 MHz	FBGA	1.8000 V	1.9 V	8 Bit	8 MWords	Synchronous	1.7 V	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	-40 to 100 °C	Tray	GS8662D08BGD				SigmaQuad-II				Memory & Data Storage												72 Mbit			510 mA	0.45		8 M x 8					SRAM			72								SRAM
GS8342S18BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342S18BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		715 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS88118CGT-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	333 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	512000	UNSPECIFIED	未说明	70 °C	有	GS88118CGT-333	524288 words	3.3 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.28	QFP	2.7, 3.6 V	18 Bit	Synchronous	2.3, 3 V	2.5, 3.3 V	TQFP	222.2@Flow-Through/333@Pipelined MHz	有	0 to 70 °C	Tray	GS88118CGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-XQFP-G100	不合格		COMMERCIAL	9 Mbit		SYNCHRONOUS	165 mA, 220 mA	4.5@Flow-Through/2.5		512 k x 18		1.6 mm	18	19 Bit	SRAM			9		SERIAL		缓存SRAM		3.6 V	3 V	SRAM	20 mm	14 mm
GS8322Z72C-133V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209	1.7 V	14	0 C	2.7 V	+ 70 C	133 MHz	有	Commercial grade				117.6@Flow-Through/133@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	72 Bit	2, 2.7 V	表面贴装	SDR	N	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	0 to 70 °C	Tray	GS8322Z72C				NBT				Memory & Data Storage												36 Mbit	8		210 mA, 235 mA	8.5 ns	Flow-Through/Pipelined	512 k x 72				19 Bit	SRAM	36 Mb			Commercial							SRAM
GS8662Q18BGD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	Synchronous	4 MWords	18 Bit	表面贴装	有	200 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8662Q18BGD-200I	200 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	BGA	Industrial grade	200 MHz	FBGA	-40 to 100 °C	Tray	GS8662Q18BGD	e1	有	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	610 mA		Pipelined	4 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm