N/A

-

YES

119

119

BGA

Compliant

BGA, BGA119,7X17,50

网格排列

3

256000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

8.5 ns

70 °C

无

GS840H18AB-166

166 MHz

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

COMMERCIAL

2

SYNCHRONOUS

0.31 mA

256KX18

3-STATE

2.19 mm

18

18 b

4.5 Mb

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

5.5 ns

70 °C

无

GS8322Z36AB-250V

250 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS8322Z36AB

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

72 Mbit

1

590 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

无

N/A

-

TQFP-100

100

2.3 V

18

0 C

3.6 V

+ 70 C

375 MHz

有

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8320Z18AGT

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

4 MWords

9 Bit

表面贴装

Compliant

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

36 Mbit

1

740 mA

Pipelined

4 M x 9

21 Bit

36 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D38BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.065 A

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 100 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS8160Z18DGT-333IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.31

QFP

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

无

N/A

-

165

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

Commercial grade

0 to 70 °C

70 °C

0 °C

1

Flow-Through/Pipelined

18 Bit

9 Mbit

Commercial

无

N/A

-

BGA-165

165

SigmaQuad-II+

QDR-II

Compliant

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662Q37BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

905 mA

Pipelined

2 M x 36

20 b

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

165

1.8000 V

Synchronous

2 MWords

8 Bit

表面贴装

Compliant

Industrial grade

200 MHz

FBGA

DDR

-40 to 85 °C

85 °C

-40 °C

1.8 V

1

Pipelined

20 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 85 °C

Tray

GS816218DGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 70 °C

Tray

GS88136CGD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

180 mA, 240 mA

4.5@Flow-Through/2.5

256 k x 36

17 b

SRAM

9 Mb

9

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

250@Flow-Through/400@Pipelined MHz

表面贴装

2.7, 3.6 V

36 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS816136DD

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Compliant

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302S08E

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

710 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

300 MHz

-40 to 85 °C

GS88218CGB

9 Mbit

2

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

N/A

-

8 Weeks

YES

100

100

4000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8640FZ18GT-7.5

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.38

QFP

Commercial grade

133.3 MHz

TQFP

SDR

3.3000 V

3 V

Synchronous

4 MWords

18 Bit

3.6 V

表面贴装

Compliant

LQFP,

FLATPACK, LOW PROFILE

3

0 to 70 °C

e3

有

3A991.B.2.B

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

2

SYNCHRONOUS

Flow-Through

4MX18

1.6 mm

18

22 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

无

N/A

-

BGA-165

165

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

181.5@Flow-Through/250@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

Compliant

250 MHz

-40 to 85 °C

85 °C

-40 °C

9 Mbit

2

165 mA, 200 mA

5.5@Flow-Through/2.5

512 k x 18

19 Bit

9 Mb

9

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

133@Flow-Through/150@Pipelined MHz

表面贴装

2, 2.7 V

32 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS8321E32AD

同步突发

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mb

Commercial

SRAM

无

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

8 MWords

9 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

-40 to 100 °C

Tray

GS8662DT11BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

745 mA

0.45

8 M x 9

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

表面贴装

2.7, 3.6 V

32 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS832132AD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 32

20 b

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

表面贴装

2, 2.7 V

18 Bit

2 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

200@Flow-Through/333@Pipelined MHz

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320E18AGT

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

无

GS8342DT11BD-550

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

550 MHz

FBGA

0 to 85 °C

Tray

GS8342DT11BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

85 °C

0 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

940 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

100

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

2

Flow-Through/Pipelined

21 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS832218AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

745 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Industrial

无