N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D08BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

705 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662Q18BD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

850 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Bulk

GS8321Z18AGD

100 °C

-40 °C

36 Mbit

2

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

无

N/A

-

8 Weeks

YES

119

119

5.21

BGA

Compliant

BGA, BGA119,7X17,50

网格排列

3

128000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

10 ns

85 °C

无

GS840H36AB-150I

150 MHz

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4

SYNCHRONOUS

0.29 mA

128KX36

3-STATE

2.19 mm

36

17 b

4.5 Mb

0.03 A

4.5

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T36BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

630 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

550 MHz

FBGA

1.8000 V

1.7 V

36 Bit

1.9 V

Compliant

550 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

36 Mbit

2

1.235 A

0.45

1 M x 36

18 b

36 Mb

36

无

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

70 °C

0 °C

9 Mbit

1

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

9 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 100 °C

Tray

GS8322Z36AGD

NBT

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

165

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

,

无

GS8342TT06BD-500I

活跃

GSI TECHNOLOGY

5.88

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

500 MHz

-40 to 100 °C

Tray

GS8342TT06BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

compliant

36 Mbit

1

740 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

QDR-II

Industrial grade

200 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

-40 to 100 °C

Tray

GS81302Q37GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

940 mA

0.45

4 M x 36

21 b

SRAM

144 Mb

144

Industrial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

4 MWords

18 Bit

表面贴装

有

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8640FZ18GT-7.5I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Industrial grade

133.3 MHz

TQFP

SDR

3.3000 V

Synchronous

-40 to 85 °C

Tray

GS8640FZ18GT

e3

有

3A991.B.2.B

NBT Flow Through

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

225 mA

7.5 ns

Flow-Through

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mb

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

SRAM

20 mm

14 mm

无

N/A

-

165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II+

Compliant

Industrial grade

400 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302D10E

100 °C

-40 °C

Memory & Data Storage

1.8 V

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

4.5 ns

85 °C

无

GS88218CD-333I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS88218CD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

19 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS88218CD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

165 mA, 220 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

-40 to 85 °C

Tray

GS864218GB

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

333 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

0 to 70 °C

Tray

GS88237CGB

SCD/DCD Pipeline

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

240 mA

Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

4 MWords

18 Bit

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

1

505 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Industrial

无

N/A

-

8 Weeks

YES

165

165

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662T18BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.33

BGA

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

1

SYNCHRONOUS

0.495 mA

Pipelined

4MX18

3-STATE

1.4 mm

18

22 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

70 °C

无

GS8182T08BD-200

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

2MX8

1.4 mm

8

20 b

18 Mb

16777216 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT10BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

945 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

-40 to 100 °C

Tray

GS8662T19BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

600 mA

0.45

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

BGA, BGA119,7X17,50

网格排列

256000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

2.5 ns

85 °C

无

GS88237CB-250IV

250 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

250 MHz

-40 to 85 °C

Tray

GS88237CB

e0

无

3A991.B.2.B

SCD/DCD Pipeline

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

215 mA

Pipelined

256 k x 36

3-STATE

1.77 mm

36

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D10BD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

820 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

- 40 C

3.6 V

+ 85 C

333 MHz

有

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

42

-40 to 85 °C

Tray

GS88218CGB

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

19 b

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

100

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8640FZ18GT

NBT

70 °C

0 °C

Memory & Data Storage

72 Mbit

2

205 mA

7.5 ns

Flow-Through

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无