N/A

-

8 Weeks

BGA-165

YES

165

165

有

333 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

5 ns

70 °C

无

GS8322Z18AD-333V

333 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.09

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

18 Bit

2, 2.7 V

0 to 85 °C

Tray

GS8322Z18AD

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 330 mA

5@Flow-Through/3@Pip

2 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

36 Mb

0.03 A

36

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662T37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

900 mA

Pipelined

2 M x 36

20 b

SRAM

72 Mb

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

5 ns

85 °C

无

GS8321E18AD-333V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS8321E18AD

3A991.B.2.B

同步突发

85 °C

0 °C

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 b

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

36 Bit

1 MWords

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 85 °C

Tray

GS8342D38BGD

SigmaQuad-II+

85 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.235 A

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-209

209

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS864272C

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

8

340 mA, 480 mA

6.5 ns

Flow-Through/Pipelined

1 M x 72

20 b

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SigmaDDR-II

DDR

Compliant

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

9 Bit

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 85 °C

Tray

GS8182R09BD

SigmaDDR-II B4

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

1

580 mA

Pipelined

2 M x 9

19 Bit

SRAM

18 Mb

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

8 MWords

9 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662T11BGD-400I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.5

BGA

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Tray

GS8662T11BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

635 mA

Pipelined

8 M x 9

1.4 mm

9

22 b

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Compliant

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662R09BD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

505 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662Q19BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

920 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

333 MHz

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS88037CGT

Pipeline

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

260 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T19BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

495 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

8 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

有

GS82582DT38GE-400I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.59

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

Tray

GS82582DT38GE

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

288 Mbit

2

SYNCHRONOUS

1.01 A

Pipelined

8 M x 36

1.5 mm

36

21 Bit

SRAM

288 Mbit

301989888 bit

Industrial

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/333@Pipelined MHz

0 to 85 °C

Bulk

GS8321E32AGD

85 °C

0 °C

36 Mbit

4

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Commercial

无

N/A

-

8 Weeks

YES

165

165

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.5 ns

85 °C

无

GS8182T08BD-167I

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

1

SYNCHRONOUS

2MX8

1.4 mm

8

20 b

18 Mb

16777216 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662T18BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

-40 to 100 °C

Tray

GS8662T18BGD

e1

有

3A991.B.2.B

SigmaDDR-II B2

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

435 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D18BD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

630 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

300 MHz

-40 to 85 °C

85 °C

-40 °C

9 Mbit

1

245 mA

Pipelined

256 k x 36

18 b

9 Mbit

Industrial

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-165

165

4 MWords

18 Bit

表面贴装

Compliant

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

Synchronous

0 to 85 °C

GS8662T20BGD

85 °C

0 °C

1.8 V

72 Mbit

1

760 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

133 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS864418GE

同步突发

70 °C

0 °C

Memory & Data Storage

72 Mbit

2

210 mA, 250 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

36 Bit

2, 2.7 V

Compliant

250 MHz

+ 85 C

-40 to 100 °C

Bulk

100 °C

-40 °C

36 Mbit

4

260 mA, 315 mA

5.5@Flow-Through/3@P

1 M x 36

20 b

36 Mb

36

Industrial

无

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5@Flow-Through/2.5

512 k x 36

19 Bit

SRAM

18 Mb

18

SRAM

无

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS88036CGT

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302S08GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

825 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8640E32GT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.45

QFP

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 70 °C

Tray

GS8640E32GT

e3

有

3A991.B.2.B

DCD

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 32

1.6 mm

32

SRAM

64 Mbit

67108864 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm