N/A

-

BGA-165

165

SMD/SMT

1.7 V

66

0 C

2.7 V

+ 70 C

200 MHz

有

Commercial grade

表面贴装

2, 2.7 V

32 Bit

256 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

153.8@Flow-Through/200@Pipelined MHz

SDR

N

NBT SRAM

GSI技术

GSI技术

Parallel

0 to 70 °C

Tray

GS881Z32CD

NBT

Memory & Data Storage

9 Mbit

1

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

N/A

-

165

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

2

Pipelined

22 Bit

144 Mbit

Industrial

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

333 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Tray

GS881E32CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

Synchronous

8 Bit

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

有

450 MHz

FBGA

-40 to 100 °C

Tray

GS8342DT06BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

795 mA

0.45

4 M x 8

SRAM

36

SRAM

N/A

-

BGA-209

209

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

300 MHz

BGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

21

0 to 70 °C

Tray

GS816273CGC

Pipeline

Memory & Data Storage

18 Mbit

8

415 mA

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

165

165

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

4.5 ns

85 °C

无

GS832118AD-375I

375 MHz

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

-40 to 100 °C

3A991.B.2.B

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

2

SYNCHRONOUS

0.31 mA

Flow-Through/Pipelined

1MX18

3-STATE

1.4 mm

18

21 Bit

36 Mbit

0.04 A

18874368 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

357 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

357 MHz

FBGA

0 to 85 °C

GS8662Q19BGD

72 Mbit

2

985 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342TT11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881Z32CD

NBT

Memory & Data Storage

9 Mbit

1

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T07BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

400 MHz

-40 to 100 °C

Tray

GS8342T07BD

e0

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

610 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.225 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

165

512 kWords

36 Bit

表面贴装

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

0 to 70 °C

1

Pipelined

19 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

200 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

200 MHz

FBGA

-40 to 100 °C

72 Mbit

2

750 mA

Pipelined

2 M x 36

20 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

15

-40 to 85 °C

Tray

GS8644Z36E

NBT

Memory & Data Storage

72 Mbit

4

295 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

FBGA

0 to 85 °C

GS81302S18E

144 Mbit

2

700 mA

Pipelined

8 M x 18

22 Bit

144 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662T09BGD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

333 MHz

-40 to 85 °C

GS881Z18CD

9 Mbit

185 mA, 240 mA

4.5@Flow-Through/2.5

512 k x 18

9

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302DT10GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302DT19E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

0 to 85 °C

Tray

GS8321E36AGD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342DT06BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

795 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-209

YES

209

209

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

2.3 ns

85 °C

无

GS816273CC-333I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

BGA

Industrial grade

333 MHz

BGA

-40 to 85 °C

Tray

GS816273CC

无

3A991.B.2.B

Pipeline

85 °C

-40 °C

PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

470 mA

Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

165

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

表面贴装

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

Compliant

Commercial grade

0 to 70 °C

70 °C

0 °C

2

Flow-Through/Pipelined

18 Bit

9 Mbit

Commercial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

6.5 ns

70 °C

无

GS8322Z18AD-200V

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8322Z18AD

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342TT38BD-500

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

500 MHz

0 to 85 °C

Tray

GS8342TT38BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

945 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

表面贴装

2.7, 3.6 V

18 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

Compliant

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

-40 to 85 °C

85 °C

-40 °C

9 Mbit

1

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

9 Mbit

Industrial

无