N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

0 to 70 °C

Tray

GS864032GT

同步突发

Memory & Data Storage

72 Mbit

4

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Commercial

SRAM

N/A

-

165

8 MWords

8 Bit

表面贴装

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

-40 to 100 °C

2

Pipelined

72 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

表面贴装

1.9 V

18 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

450 MHz

有

450 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

0 to 70 °C

9 Mbit

1

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

SyncBurst

Details

+ 70 C

3.6 V

0 C

36

2.3 V

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 70 °C

Tray

GS816118DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

300 MHz

1.8000 V

1.7 V

8 MWords

9 Bit

1.9 V

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

-40 to 100 °C

Tray

GS8662Q10BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

860 mA

0.45

8 M x 9

SRAM

72

SRAM

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS8662R08BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662QT37BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

1.06 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

225 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS864436E-225IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS864436E

无

3A991.B.2.B

同步突发

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.4 mm

36

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662DT11BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

333 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

0 to 70 °C

GS881Z18CGD

9 Mbit

1

165 mA, 220 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

0 to 70 °C

9 Mbit

1

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Commercial

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

42

0 to 70 °C

Tray

GS882Z36CB

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS881Z32CGT

NBT

Memory & Data Storage

9 Mbit

1

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT07BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

有

350 MHz

+ 85 C

-40 to 100 °C

Tray

GS8662T09BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D18E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS88136CGD-200IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

-40 to 85 °C

GS88136CGD

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS882Z36CGD

NBT

Memory & Data Storage

9 Mbit

4

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT07BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.9 V

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342DT20BD-500I

500 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

-40 to 100 °C

Tray

GS8342DT20BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

865 mA

0.45

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342QT07BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

333 MHz

-40 to 100 °C

Tray

GS8342QT07BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

895 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

550 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

550 MHz

FBGA

-40 to 100 °C

36 Mbit

1

810 mA

Pipelined

2 M x 18

20 Bit

36 Mbit

Industrial