N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302R36GE

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

950 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

70 °C

无

GS8182R09BD-250

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

2MX9

1.4 mm

9

19 b

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS864272GC-250

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS864272GC

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

72 Mbit

8

SYNCHRONOUS

330 mA, 460 mA

6.5 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

167 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

8 ns

85 °C

有

GS8642Z36GB-167I

167 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

-40 to 85 °C

Tray

GS8642Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

240 mA, 290 mA

8 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

333 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 70 C

3.6 V

0 C

42

0 to 70 °C

Tray

GS88237CB

SCD/DCD Pipeline

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

240 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-260

YES

260

260

4 MWords

18 Bit

1.4 V

表面贴装

Compliant

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673ET18BGK-550I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Industrial grade

550/375 MHz

BGA

DDR

1.3500 V

1.25 V

Synchronous

-40 to 85 °C

Tray

GS8673ET18BGK

3A991.B.2.B

SigmaDDR-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

1.49 A

Pipelined

4 M x 18

2.3 mm

18

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

9 Bit

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662DT10BD-450

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

0 to 85 °C

Bulk

GS8662DT10BD

3A991.B.2.B

SigmaQuad-II+ B4

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

820 mA

Pipelined

8 M x 9

1.4 mm

9

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

16 MWords

8 Bit

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 100 °C

Bulk

GS81302TT07GE

100 °C

-40 °C

1.8 V

144 Mbit

1

700 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Industrial

无

N/A

-

165

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 85 °C

85 °C

-40 °C

1.8 V

2

Pipelined

17 Bit

18 Mbit

Industrial

无

N/A

-

8 Weeks

YES

165

165

70 °C

有

GS8662D37BGD-333

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.45

BGA

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.45 ns

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

管道结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

2

SYNCHRONOUS

Pipelined

2MX36

1.4 mm

36

19 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS864218GB-250IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS864218GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 b

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

66

- 40 C

2.7 V

+ 85 C

150 MHz

有

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

Compliant

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 85 °C

Tray

GS881E18CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342QT19BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

955 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

YES

100

100

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

12 ns

70 °C

有

GS840H32AGT-100

100 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.7

QFP

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

4

SYNCHRONOUS

0.19 mA

128KX32

3-STATE

1.6 mm

32

17 b

4 Mb

0.02 A

4194304 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

无

N/A

-

8 Weeks

YES

100

100

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

8.5 ns

70 °C

有

GS840H32AGT-166

166 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

QFP

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

4

SYNCHRONOUS

0.31 mA

128KX32

3-STATE

1.6 mm

32

17 b

4 Mb

0.02 A

4194304 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

表面贴装

2.7, 3.6 V

32 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

250@Flow-Through/400@Pipelined MHz

Compliant

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Bulk

GS816132DGD

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

+ 85 C

Parallel

4.2 ns

GS8322Z36AGB-375I

375 MHz

GSI技术

GSI TECHNOLOGY

FBGA

2.5, 3.3 V

Synchronous

1 MWords

36 Bit

表面贴装

Compliant

3.6 V

- 40 C

2.3 V

SMD/SMT

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

85 °C

有

2.5 V

BGA

RECTANGULAR

活跃

5.12

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

SDR

2.3, 3 V

2.7, 3.6 V

375 MHz

-40 to 100 °C

Bulk

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

22 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

15

- 40 C

1.9 V

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Bulk

GS8342DT10BD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

795 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7 V

+ 85 C

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

5 ns

85 °C

无

GS8322Z18AD-333IV

333 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.09

BGA

Compliant

有

333 MHz

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

14

- 40 C

Bulk

GS8322Z18AD

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

265 mA, 350 mA

5 ns

2 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

36 Mb

0.04 A

36

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662Q09BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

860 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

7.5 ns

85 °C

有

GS881E32CGT-150IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS881E32CGT

e3

有

3A991.B.2.B

DCD Pipeline/Flow Through

Matte Tin (Sn)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

未说明

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

1.6 mm

32

18 b

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

2, 2.7 V

32 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

200@Flow-Through/333@Pipelined MHz

Compliant

333 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

Industrial grade

Parallel

SMD/SMT

表面贴装

-40 to 100 °C

Bulk

GS8321E32AGD

100 °C

-40 °C

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Industrial

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II

DDR

Military grade

表面贴装

8 Bit

8 MWords

Synchronous

1.8000 V

QDR

FBGA

300 MHz

Compliant

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Bulk

GS8662Q08BD

SigmaQuad-II

Memory & Data Storage

1.8 V

72 Mbit

980 mA

Pipelined

8 M x 8

23 Bit

SRAM

72 Mbit

Military

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

85 °C

无

GS832136AD-333V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.7

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Bulk

GS832136AD

3A991.B.2.B

同步突发

85 °C

0 °C

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

200 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200 MHz

0 to 85 °C

GS8662Q10BGD

85 °C

0 °C

1.8 V

72 Mbit

2

600 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

无