N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T36BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662T08BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

425 mA

Pipelined

8 M x 8

22 b

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

150 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

有

150 MHz

+ 125 C

2.7 V

- 40 C

14

1.7 V

-40 to 125 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

扩展工业

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662R36BD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

550 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342TT06BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

800 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8662D36BD-350I

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

350 MHz

FBGA

-40 to 100 °C

Bulk

GS8662D36BD

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

895 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

400 MHz

+ 70 C

3.6 V

0 C

18

0 to 85 °C

Bulk

GS8320E32AGT

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

Synchronous

8 MWords

8 Bit

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Commercial grade

0 to 85 °C

Bulk

GS8662T08BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

625 mA

0.45

8 M x 8

22 b

SRAM

72 Mb

72

Commercial

SRAM

无

N/A

-

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302T37GE-400

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

400 MHz

FBGA

0 to 85 °C

Tray

GS81302T37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

1

SYNCHRONOUS

995 mA

Pipelined

4 M x 36

1.5 mm

36

21 Bit

SRAM

144 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662Q36BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

BGA

Industrial grade

-40 to 100 °C

Tray

GS8662Q36BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

905 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

225 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36GE-225IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

153.8@Flow-Through/225@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS880F18CGT

流过

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

145 mA

5.5 ns

Flow-Through

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

36 Mbit

2

715 mA

Pipelined

2 M x 18

19 Bit

36 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

9 Bit

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662DT10BD-450

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

0 to 85 °C

Bulk

GS8662DT10BD

3A991.B.2.B

SigmaQuad-II+ B4

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

820 mA

Pipelined

8 M x 9

1.4 mm

9

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

16 MWords

8 Bit

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

-40 to 100 °C

Bulk

GS81302TT07GE

100 °C

-40 °C

1.8 V

144 Mbit

1

700 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Industrial

无

N/A

-

165

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 85 °C

85 °C

-40 °C

1.8 V

2

Pipelined

17 Bit

18 Mbit

Industrial

无

N/A

-

BGA-119

119

Compliant

有

3.6 V

- 40 C

2.3 V

SMD/SMT

NBT SRAM

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

SDR

2.7, 3.6 V

200 MHz

+ 85 C

14

Parallel

GSI技术

GSI技术

SDR

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

表面贴装

-40 to 85 °C

Tray

GS8642Z18B

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

225 mA, 290 mA

7.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342D37BD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

450 MHz

-40 to 100 °C

Bulk

GS8342D37BD

3A991.B.2.B

SigmaQuad-II+ B4

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

1.025 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.25 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

333 MHz

-40 to 100 °C

GS8662Q37BGD

100 °C

-40 °C

1.8 V

72 Mbit

2

1.11 A

Pipelined

2 M x 36

20 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662TT37BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

810 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.2 ns

85 °C

有

GS832218AGD-375I

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

FBGA

-40 to 100 °C

Bulk

GS832218AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-260

SigmaQuad-IIIe

DDR

Commercial grade

675/450 MHz

QDR

1.3500 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

675 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 70 °C

Tray

GS8673ED36BK

SigmaQuad-IIIe B4

70 °C

0 °C

Memory & Data Storage

1.35 V

72 Mbit

3.17 A

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662QT10BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

730 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

70 °C

无

GS8182R08BD-400

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX8

1.4 mm

8

19 Bit

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无