N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 70 C

2.7 V

0 C

18

0 to 85 °C

Bulk

GS8320Z18AGT

NBT

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

8 MWords

8 Bit

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662T08BD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

0 to 85 °C

Bulk

GS8662T08BD

3A991.B.2.B

SigmaDDR-II B2

85 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

625 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

22 b

SRAM

72 Mbit

67108864 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

36 Bit

2 MWords

Compliant

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

0 to 85 °C

GS8662Q37BGD

85 °C

0 °C

1.8 V

72 Mbit

2

895 mA

Pipelined

2 M x 36

20 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

505 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182S18BGD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

720 mA

Pipelined

1 M x 18

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

70 °C

有

GS832236AGD-333

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

222@Flow-Through/333@Pipelined MHz

0 to 85 °C

Bulk

GS832236AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302R36E

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

905 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

250 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 85 °C

Tray

GS8320E18AGT

DCD Synchronous Burst

Memory & Data Storage

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342QT10BGD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

885 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662Q37BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.48

BGA

Industrial grade

300 MHz

FBGA

-40 to 100 °C

Tray

GS8662Q37BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

1.07 A

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

0.265 A

75497472 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 100 °C

Bulk

GS832118AGD

同步突发

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

0 C

1.9 V

+ 70 C

250 MHz

有

Compliant

DDR

SigmaSIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Tray

GS8662S18BGD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

500 mA

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

300 MHz

有

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Bulk

GS8662DT07BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

580 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

YES

260

GS8673EQ18BGK-725IS

4194304 words

1.35 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.72

Compliant

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

有

3A991.B.2.B

85 °C

-40 °C

8542.32.00.41

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

SYNCHRONOUS

4MX18

2.3 mm

18

21 b

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

无

N/A

-

BGA-260

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

QDR-III

Compliant

有

725 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Tray

GS8673EQ18BGK

SigmaQuad-IIIe B2

70 °C

0 °C

Memory & Data Storage

1.35 V

72 Mbit

2.38 A

4 M x 18

21 b

SRAM

72 Mb

SRAM

无

N/A

-

8 Weeks

YES

165

165

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182T08BD-375I

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.32

BGA

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

-40 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

1

SYNCHRONOUS

Pipelined

2MX8

1.4 mm

8

20 Bit

18 Mbit

16777216 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Bulk

GS8161E18DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

2

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

100

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

Commercial grade

0 to 70 °C

1

Flow-Through/Pipelined

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

18 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

表面贴装

1.9 V

0 to 85 °C

72 Mbit

2

695 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT38BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

1.04 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

表面贴装

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342TT38BD-550I

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Tray

GS8342TT38BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

1.05 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8162Z72CC-200

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8162Z72CC

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

18 Mbit

8

SYNCHRONOUS

230 mA, 290 mA

6.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662QT07BD-333I

8388608 words

1.8 V

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72 Mbit

SYNCHRONOUS

930 mA

8 M x 8

1.4 mm

8

67108864 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D06GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.175 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS864218GB-300

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS864218GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

5.5 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm