N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

0 to 70 °C

Tray

GS882Z36CGB

NBT

Memory & Data Storage

9 Mbit

4

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342QT07BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

955 mA

Pipelined

4 M x 8

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

153.8@Flow-Through/250@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

0 to 70 °C

Tray

GS8640E18GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

230 mA, 315 mA

6.5@Flow-Through/3@P

4 M x 18

SRAM

72

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

有

GS8321Z36AGD-150V

150 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

0 to 85 °C

Tray

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342D10BD-450

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

450 MHz

FBGA

0 to 85 °C

Tray

GS8342D10BD

3A991.B.2.B

SigmaQuad-II+ B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

785 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

0.24 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

6 Weeks, 6 Days

TQFP-100

YES

100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8640Z36GT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

153@Flow-Through/250@Pipelined MHz

TQFP

SDR

0 to 70 °C

Tray

GS8640Z36GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302Q07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 70 °C

GS8642Z36B

72 Mbit

4

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

72 Mbit

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS88132CGT

同步突发

Memory & Data Storage

9 Mbit

1

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

10 Weeks

YES

100

100

未说明

6.5 ns

85 °C

有

GS816036DGT-200IT

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.32

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

-40 to 100 °C

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

512KX36

1.6 mm

36

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

FBGA

-40 to 100 °C

Tray

GS81302DT07E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

900 mA

0.45

16 M x 8

SRAM

144

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

5.5 ns

70 °C

无

GS8321Z18AD-250V

250 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

GS8321Z18AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

225 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT19E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

900 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q09BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

955 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

0 to 85 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

240 mA, 285 mA

4.5@Flow-Through/2.5

1 M x 18

SRAM

18

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662S09BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

500 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 70 °C

Tray

GS8642Z72C

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

285 mA, 385 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

14 Weeks, 1 Day

BGA-165

YES

165

165

FBGA

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q37BGD-300

300 MHz

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

1.93

BGA

300 MHz

+ 70 C

1.9 V

0 C

SMD/SMT

Parallel

1.8000 V

Synchronous

1.8 V

1.7 V

Commercial grade

300 MHz

表面贴装

1.9 V

36 Bit

2 MWords

1.7 V

QDR

0 to 85 °C

GS8662Q37BGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.06 mA

Pipelined

2MX36

3-STATE

1.4 mm

36

20 Bit

72 Mbit

0.255 A

75497472 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

6 Weeks

YES

48

48

128000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS72116AU-8I

131072 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.22

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

无

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

ASYNCHRONOUS

128KX16

1.2 mm

16

2097152 bit

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D08GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

950 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

无

GS832132AD-333IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 100 °C

Tray

GS832132AD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 32

1.4 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

FBGA

QDR

0 to 85 °C

GS8662Q07BGD

72 Mbit

2

850 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS8161Z18DGD

NBT

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

DDR

Details

SigmaDDR-II+

GSI技术

GSI技术

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT37BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

735 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Industrial grade

-40 to 85 °C

1

Pipelined

19 Bit

18 Mbit

Industrial