N/A

-

8 Weeks

BGA-165

YES

165

165

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA165,11X15,40

网格排列

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z18GE-250I

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

-40 to 85 °C

Tray

GS8644Z18GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

3-STATE

1.5 mm

18

22 Bit

SRAM

72 Mbit

0.16 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

165

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

2

Pipelined

22 Bit

72 Mbit

Industrial

N/A

-

8 Weeks

BGA-119

YES

119

119

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

NBT SRAM

SDR

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

14

- 40 C

2.7 V

+ 85 C

333 MHz

有

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

5 ns

85 °C

无

GS8322Z36AB-333IV

333 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Tray

GS8322Z36AB

3A991.B.2.B

NBT

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

165

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

400 MHz

-40 to 85 °C

0.45

19 Bit

18

N/A

-

10 Weeks

BGA-119

YES

119

119

表面贴装

333 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

BGA,

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS8162Z18DGB-333IV

1.8 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.27

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

-40 to 100 °C

GS8162Z18DGB

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

22 mm

14 mm

N/A

-

YES

119

119

128000

PLASTIC/EPOXY

未说明

8.5 ns

70 °C

有

GS840H32AGB-166

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

BGA,

网格排列

3

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

128KX32

2.19 mm

32

4194304 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-119

119

SDR

2.7 V

+ 70 C

150 MHz

有

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

表面贴装

2, 2.7 V

0 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

0 to 70 °C

Tray

GS882Z36CGB

NBT

Memory & Data Storage

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4 ns

70 °C

有

GS832236AGD-400

400 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

0 to 85 °C

Tray

GS832236AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-260

YES

260

260

Synchronous

4 MWords

18 Bit

1.4 V

表面贴装

有

675 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

Details

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

有

GS8673ET18BGK-675

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Commercial grade

675 MHz

BGA

DDR

1.3500 V

1.3 V

0 to 70 °C

Tray

GS8673ET18BGK

3A991.B.2.B

SigmaDDR-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

2

SYNCHRONOUS

1.75 A

Pipelined

4 M x 18

2.3 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SigmaQuad-II+

Details

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302DT07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

256000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS88236CB-250V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS88236CB

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

DDR

-40 to 100 °C

72 Mbit

1

635 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

SigmaQuad-II+

N

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662Q19BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

600 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

4.2 ns

85 °C

有

GS832036AGT-375

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.7

QFP

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS832036AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS8161Z18DGD

NBT

Memory & Data Storage

18 Mbit

2

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302Q18E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1.26 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662DT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662Q19BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

930 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

300 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

0 to 70 °C

Tray

GS88237CB

SCD/DCD Pipeline

Memory & Data Storage

9 Mbit

2

225 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 70 °C

Tray

GS8642Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662Q09BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

920 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

SDR

SyncBurst

Industrial grade

250 MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS816273CC

Pipeline

Memory & Data Storage

18 Mbit

8

360 mA

5.5 ns

Pipelined

256 k x 72

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

未说明

8.5 ns

70 °C

无

GS832272C-150

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

117.6@Flow-Through/150@Pipelined MHz

0 to 70 °C

Tray

GS832272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

210 mA, 260 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.06 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS864018GT-167V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

0 to 70 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm