N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT07E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.185 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

YES

119

119

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

有

GS840H18AGB-150I

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

BGA,

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

256KX18

2.19 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342T07BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

70 °C

无

GS832236AD-333

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

222@Flow-Through/333@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS832236AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302S08GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

890 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mb

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

-40 to 100 °C

Tray

GS832118AD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342DT06BD-500I

500 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

-40 to 100 °C

Tray

GS8342DT06BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

865 mA

0.45

4 M x 8

3-STATE

1.4 mm

8

SRAM

36

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS882Z18CD

NBT

Memory & Data Storage

9 Mbit

2

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT19BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

695 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

GSI技术

NBT SRAM

Details

SDR

GSI技术

Parallel

SMD/SMT

1.7 V

66

- 40 C

LQFP,

FLATPACK, LOW PROFILE

512000

UNSPECIFIED

-40 °C

未说明

85 °C

有

GS880Z18CGT-150IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS880Z18CGT

3A991.B.2.B

NBT

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS8642Z72C-167IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8642Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

280 mA, 360 mA

8 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS881Z18CD

NBT

Memory & Data Storage

9 Mbit

1

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.2 ns

85 °C

无

GS8322Z36AB-375I

375 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8322Z36AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342T38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

1.04 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

4000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8642Z18B-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8642Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

225 mA, 290 mA

7.5 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

无

GS832132AD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS832132AD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

1.4 mm

32

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

333 MHz

BGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

-40 to 85 °C

Tray

GS816273CGC

Pipeline

Memory & Data Storage

18 Mbit

8

470 mA

4.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

无

GS8342DT06BD-550

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

550 MHz

FBGA

0 to 85 °C

Tray

GS8342DT06BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

940 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S18E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

710 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

8.5 ns

85 °C

无

GS8644Z36E-133I

133 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

-40 to 85 °C

Tray

GS8644Z36E

无

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

255 mA, 305 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.16 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

表面贴装

1.9 V

9 Bit

8 MWords

Synchronous

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D09BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

70 °C

有

GS880E18CGT-250V

250 MHz

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

181.5@Flow-Through/250@Pipelined MHz

0 to 70 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8162Z72CC-150I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS8162Z72CC

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

220 mA, 240 mA

7.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT07BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

785 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

未说明

6.5 ns

70 °C

无

GS832272C-250

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

FBGA

SDR

0 to 70 °C

Tray

GS832272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

SRAM

36 Mbit

0.06 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm