N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8342T10BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5 ns

85 °C

有

GS832236AGD-333IV

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

-40 to 100 °C

Tray

GS832236AGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS816272CC-150

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

0 to 70 °C

GS816272CC

无

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

18 Mbit

8

SYNCHRONOUS

210 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

256KX72

1.7 mm

72

18 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

YES

119

119

网格排列

3

128000

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

有

GS840H32AGB-150I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

BGA,

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

128KX32

2.19 mm

32

4194304 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

10

- 40 C

1.9 V

+ 85 C

375 MHz

有

Industrial grade

表面贴装

1.9 V

9 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

375 MHz

DDR-II

Details

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS81302T09GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

855 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS864272C-167IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS864272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

280 mA, 360 mA

8 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

7 Weeks, 4 Days

BGA-209

YES

209

209

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8642Z72C-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8642Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

295 mA, 405 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T38GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.31 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

0 to 85 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

890 mA

0.45

4 M x 18

SRAM

72

Commercial

SRAM

N/A

-

BGA-165

165

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

SDR

0 to 85 °C

Tray

GS832118AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

表面贴装

2, 2.7 V

36 Bit

256 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

181.8@Flow-Through/250@Pipelined MHz

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881Z36CGD

NBT

Memory & Data Storage

9 Mbit

1

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

无

GS8321Z18AD-150V

150 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8321Z18AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

185 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Commercial grade

0 to 70 °C

1

Pipelined

19 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

550 MHz

+ 85 C

1.9 V

- 40 C

DDR

Details

-40 to 100 °C

Tray

GS8342T06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

810 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

NBT SRAM

Details

SDR

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 85 °C

Tray

GS8640FZ18GT

NBT

Memory & Data Storage

72 Mbit

1

250 mA

6.5 ns

Flow-Through

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SigmaDDR-II+

N

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662T37BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

635 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 70 °C

Tray

GS864236GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662TT10BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

N

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T37BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

810 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS816136DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

N

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

14

0 C

2.7 V

+ 70 C

200 MHz

有

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

6.5 ns

70 °C

无

GS832236AB-200V

200 MHz

1048576 words

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

FBGA

1.8, 2.5 V

2, 2.7 V

36 Bit

Synchronous

1.7, 2.3 V

0 to 85 °C

Tray

GS832236AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

SYNCHRONOUS

215 mA, 250 mA

6.5@Flow-Through/3@P

1 M x 36

3-STATE

1.99 mm

36

SRAM

0.03 A

36

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

730 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662S36BGD-350I

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.71

BGA

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

Tray

GS8662S36BGD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

SYNCHRONOUS

890 mA

2 M x 36

1.4 mm

36

SRAM

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm