N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302T36E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

895 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8662DT37BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

1.055 A

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662QT07BD-357

8388608 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

357 MHz

+ 70 C

1.9 V

GS8662QT07BD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

SYNCHRONOUS

985 mA

8MX8

1.4 mm

8

67108864 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Military grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

-55 to 125 °C

Tray

GS8662TT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4 ns

85 °C

无

GS832236AD-400I

400 MHz

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.12

BGA

400 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

-40 to 100 °C

GS832236AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

0.37 mA

4 ns

Flow-Through/Pipelined

1MX36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS832218AD-200IV

200 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

-40 to 100 °C

Tray

GS832218AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

215 mA, 250 mA

6.5@Flow-Through/3@P

2 M x 18

3-STATE

1.4 mm

18

SRAM

0.04 A

36

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

7.5 ns

85 °C

有

GS881E32CGD-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

未说明

-40 °C

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

1.4 mm

32

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

有

GS8321Z36AGD-400I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

-40 to 100 °C

Tray

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

YES

165

165

有

GS88132CGD-300I

BGA

5.16

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

3.3 V

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

-40 to 85 °C

3A991.B.2.B

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

1

SYNCHRONOUS

Flow-Through/Pipelined

256KX32

1.4 mm

32

17 Bit

9 Mbit

8388608 bit

Industrial

SERIAL

缓存SRAM

3.6 V

3 V

15 mm

13 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (15x17)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Tray

GS81302D18

活跃

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302D18GE

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

144 Mbit

2

350 MHz

950 mA

SRAM

Parallel

Pipelined

8 M x 18

-

21 Bit

SRAM

144 Mbit

Industrial

SRAM

8M x 18

N/A

-

BGA-165

165

GSI技术

SyncBurst

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS881E32CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

SRAM

8 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342TT10BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

670 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

有

GS832136AGD-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

-40 to 100 °C

Tray

GS832136AGD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

10

- 40 C

1.9 V

+ 85 C

350 MHz

有

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

DDR-II

N

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302TT37E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS88132CGT

同步突发

Memory & Data Storage

9 Mbit

1

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

DDR-II

Details

SigmaDDR-II

0 to 85 °C

Tray

GS81302T09GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

16 M x 9

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS832018AGT

同步突发

Memory & Data Storage

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

70 °C

无

GS832218AD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS832218AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-209

209

GSI技术

GSI技术

NBT SRAM

Details

SDR

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 125 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

-40 to 125 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

6.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

扩展工业

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

1.270077 oz

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

有

GS864272GC-300I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.63

BGA

85 °C

5.5 ns

未说明

-40 °C

PLASTIC/EPOXY

1000000

3

GRID ARRAY, LOW PROFILE

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS864272GC

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

385 mA, 540 mA

5.5 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

有

GS832236AGB-200IV

200 MHz

1.8 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

-40 to 100 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

36 Mb

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8662D36BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

885 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

15

- 40 C

1.9 V

+ 85 C

500 MHz

有

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS8662DT11BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

900 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662DT19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

1.7 V

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

-40 to 100 °C

Tray

GS8662QT37BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

1.205 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM