GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度
GS81302S09E-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	DDR-II	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	Synchronous	16 MWords	9 Bit	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	-40 to 100 °C	Tray	GS81302S09E				SigmaSIO DDR-II				Memory & Data Storage												144 Mbit	2		825 mA		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Industrial							SRAM
GS832132AGD-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	1 MWords	32 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	5.5 ns	85 °C	有	GS832132AGD-250V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS832132AGD			3A991.B.2.B	同步突发		PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit	4	SYNCHRONOUS	240 mA, 295 mA	5.5 ns	Flow-Through/Pipelined	1 M x 32		1.4 mm	32	20 Bit	SRAM	36 Mbit		33554432 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8342D20BGD-550I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Parallel	SMD/SMT	1.7 V	15	- 40 C	1.9 V	+ 85 C	550 MHz	有	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342D20BGD-550I	550 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Industrial grade	550 MHz	-40 to 100 °C	Tray	GS8342D20BGD			3A991.B.2.B	SigmaQuad-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	950 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	19 Bit	SRAM	36 Mbit	0.275 A	75497472 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342TT07BGD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT07BGD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		670 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8321E18AGD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	375 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	4.2 ns	85 °C	有	GS8321E18AGD-375I	375 MHz	2.5 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.31	BGA	Industrial grade	238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	-40 to 100 °C			e1	有	3A991.B.2.B		锡银铜	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		SRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	270 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit		36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V		15 mm	13 mm
GS8662QT37BD-357	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	N	DDR	Commercial grade				357 MHz	FBGA	QDR	1.8000 V	Synchronous	2 MWords	36 Bit	表面贴装	有	357 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 85 °C	Tray	GS8662QT37BD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		1.195 A		Pipelined	2 M x 36				20 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8662DT38BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	Details	DDR	Industrial grade				400 MHz	FBGA	QDR	1.8000 V	Synchronous	2 MWords	表面贴装	36 Bit	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8662DT38BGD				SigmaQuad-II+				Memory & Data Storage												72 Mbit	2		950 mA		Pipelined	2 M x 36				19 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8321E36AD-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	SDR	SyncBurst	GSI技术	GSI技术	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	7.5 ns	无	GS8321E36AD-150IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.23	BGA	Industrial grade	133@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	-40 to 100 °C	Tray	GS8321E36AD			3A991.B.2.B	同步突发		ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE		Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格			36 Mbit	4	SYNCHRONOUS	220 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36		1.4 mm	36	20 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS81302T38E-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	-40 °C	未说明	0.37 ns	85 °C	无	GS81302T38E-450I	4194304 words	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	5.06	BGA	有	450 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	LBGA,		Tray	GS81302T38E		无	3A991.B.2.B	SigmaDDR-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	144 Mbit		SYNCHRONOUS	1.2 A			4 M x 36		1.5 mm	36		SRAM			150994944 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8644Z36GE-133IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				117.6@Flow-Through/133@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	36 Bit	2, 2.7 V	表面贴装	有	133 MHz	+ 85 C	2.7 V	- 40 C	15	1.7 V	-40 to 85 °C	Tray	GS8644Z36GE				NBT				Memory & Data Storage												72 Mbit	4		255 mA, 305 mA	8.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8662QT19BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	+ 85 C	250 MHz	有	Industrial grade				250 MHz	FBGA	QDR	1.8000 V	Synchronous	4 MWords	18 Bit	表面贴装	QDR-II	Details	SigmaQuad-II+	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	15	- 40 C	1.9 V	-40 to 100 °C	Tray	GS8662QT19BGD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		730 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8662T36BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	36 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662T36BD				SigmaDDR-II B2				Memory & Data Storage												72 Mbit	1		625 mA		Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8662Q09BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	333 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				333 MHz	FBGA	QDR	-40 to 100 °C																						72 Mbit	2		930 mA		Pipelined	8 M x 9				22 Bit		72 Mbit			Industrial
GS8182T36BD-375M	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	36 Bit	表面贴装	Military grade					375 MHz	FBGA	DDR	1.8000 V	Synchronous	512 kWords																												Pipelined					19 Bit		18 Mbit			Military
GS88136CD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	LBGA,	GRID ARRAY, LOW PROFILE	256000	PLASTIC/EPOXY	-40 °C	未说明	85 °C	无	GS88136CD-150I	262144 words	3.3 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	133.3@Flow-Through/150@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	36 Bit	2.7, 3.6 V	有	150 MHz	+ 85 C	-40 to 85 °C	Tray	GS88136CD			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	9 Mbit		SYNCHRONOUS	150 mA, 160 mA	7.5@Flow-Through/3.8		256 k x 36		1.4 mm	36		SRAM			9		SERIAL		缓存SRAM		3.6 V	3 V	SRAM	15 mm	13 mm
GS88136CD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	256 kWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	66	1.7 V	SMD/SMT	Parallel	GSI技术	SDR	N	SyncBurst	GSI技术	LQFP,	网格排列	256000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	无	GS88136CD-150V	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS88136CD			3A991.B.2.B	同步突发		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	9 Mbit	1	SYNCHRONOUS	110 mA, 125 mA	7.5 ns	Flow-Through/Pipelined	256 k x 36		1.4 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8662DT19BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	Industrial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8662DT19BD				SigmaQuad-II+ B4				Memory & Data Storage												72 Mbit	2		745 mA		Pipelined	4 M x 18				20 Bit	SRAM	72 Mbit			Industrial							SRAM
GS832272C-225	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	72 Bit	2.7, 3.6 V	表面贴装	有	225 MHz	+ 70 C	3.6 V	0 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA, BGA209,11X19,40	GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	BGA209,11X19,40	未说明	7 ns	70 °C	无	GS832272C-225	225 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	Commercial grade	FBGA	SDR	0 to 70 °C	Tray	GS832272C		无	3A991.B.2.B	SCD/DCD Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B209	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	8	SYNCHRONOUS	255 mA, 350 mA	7 ns	Flow-Through/Pipelined	512 k x 72	3-STATE	1.7 mm	72		SRAM	36 Mbit	0.06 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.38 V	2.7 V	2.3 V	SRAM	22 mm	14 mm
GS88018CGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS88018CGT-200IV	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	QFP	Industrial grade	200 MHz	TQFP	-40 to 85 °C	Tray	GS88018CGT	e3	有	3A991.B.2.B	同步突发	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	9 Mbit	2	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18	19 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS8322Z72C-166V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	1.7, 2.3 V	Synchronous	512 kWords	72 Bit	2, 2.7 V	表面贴装	SDR	N	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	14	0 C	2.7 V	+ 70 C	166 MHz	有	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	8 ns	70 °C	无	GS8322Z72C-166V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	Commercial grade	125@Flow-Through/166@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS8322Z72C		无	3A991.B.2.B	NBT		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B209	不合格		COMMERCIAL	36 Mbit	8	SYNCHRONOUS	225 mA, 280 mA	8 ns	Flow-Through/Pipelined	512 k x 72		1.7 mm	72	19 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS881E18CD-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	SMD/SMT	-40 to 85 °C	Tray	GS881E18CD				DCD Pipeline/Flow Through				Memory & Data Storage												9 Mbit	2		125 mA, 135 mA	7.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Industrial							SRAM
GS8662Q10BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				333 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662Q10BD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		920 mA		Pipelined	8 M x 9				22 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8342T10BGD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaDDR-II+	Details	DDR	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	9 Bit	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 85 °C	Tray	GS8342T10BGD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		670 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS840H32AGB-180I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	119	119	网格排列	3	128000	PLASTIC/EPOXY	-40 °C	未说明	8 ns	85 °C	有	GS840H32AGB-180I	131072 words	3.3 V	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.29	BGA			BGA,				e1	有	3A991.B.2.B		锡银铜	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL			SYNCHRONOUS				128KX32		2.19 mm	32					4194304 bit		PARALLEL		缓存SRAM		3.6 V	3 V		22 mm	14 mm
GS8662TT07BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	DDR	Commercial grade				350 MHz	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	0 to 85 °C	Tray	GS8662TT07BD				SigmaDDR-II+ B2				Memory & Data Storage												72 Mbit			590 mA	0.45		8 M x 8					SRAM			72	Commercial							SRAM