N/A

-

BGA-119

119

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS8642Z18GB

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

290 mA, 390 mA

5.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

YES

119

119

BGA, BGA119,7X17,50

网格排列

3

256000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

8 ns

70 °C

无

BGA

5.21

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

BGA

3.3 V

262144 words

180 MHz

GS840H18AB-180

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.335 mA

256KX18

3-STATE

2.19 mm

18

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662DT19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-260

260

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

Commercial grade

675/450 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

4 MWords

18 Bit

1.4 V

表面贴装

有

675 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

0 to 70 °C

Tray

GS8673ED18BK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

2.26 A

1.35 Gb/s

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302Q10E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

200 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

1.9 V

9 Bit

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

-40 to 100 °C

Tray

GS8662Q09BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

610 mA

0.45

8 M x 9

SRAM

72

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

70 °C

有

GS88118CGD-150

524288 words

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

Tray

GS88118CGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

512 k x 18

1.4 mm

18

SRAM

9437184 bit

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D10BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

715 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS8640E32GT

DCD

Memory & Data Storage

72 Mbit

4

240 mA, 290 mA

8 ns

Flow-Through/Pipelined

2 M x 32

SRAM

64 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 70 °C

Tray

GS816273CC

Pipeline

Memory & Data Storage

18 Mbit

8

350 mA

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662S08BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

165

165

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662DT37BD-300I

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.78

BGA

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

-40 to 100 °C

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

2

SYNCHRONOUS

Pipelined

2MX36

1.4 mm

36

19 Bit

72 Mb

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

165

1.8000 V

Synchronous

2 MWords

9 Bit

表面贴装

Compliant

Industrial grade

375 MHz

FBGA

DDR

-40 to 85 °C

85 °C

-40 °C

1.8 V

1

Pipelined

20 b

18 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662T36BGD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Industrial grade

-40 to 100 °C

Tray

GS8662T36BGD

e1

有

3A991.B.2.B

SigmaDDR-II B2

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

695 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

166.6@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 70 °C

Tray

GS8642Z72C

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

72 Mbit

8

330 mA, 460 mA

6.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

2 MWords

36 Bit

表面贴装

Compliant

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

0 to 85 °C

Bulk

GS8662T37BGD

85 °C

0 °C

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

20 b

72 Mbit

Commercial

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

0 to 70 °C

Tray

GS88218CGB

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

165 mA, 220 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302S08E

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

815 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

Military grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 125 C

1.9 V

- 55 C

18

1.7 V

-55 to 125 °C

Tray

GS8182D08BD

SigmaQuad-II

125 °C

-55 °C

Memory & Data Storage

1.8 V

18 Mbit

2

730 mA

Pipelined

2 M x 8

19 Bit

SRAM

18 Mbit

Military

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

400 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

250@Flow-Through/400@Pipelined MHz

-40 to 100 °C

Bulk

GS832136AGD

100 °C

-40 °C

36 Mbit

4

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.2 ns

85 °C

无

GS832218AB-375I

375 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS832218AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mb

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

GSI技术

RECTANGULAR

BGA

1.8 V

2097152 words

333 MHz

GS8322Z18AB-333IV

无

85 °C

5 ns

-40 °C

BGA119,7X17,50

PLASTIC/EPOXY

2000000

网格排列

BGA, BGA119,7X17,50

333 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

200@Flow-Through/333@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

BGA

5.27

GSI TECHNOLOGY

活跃

-40 to 100 °C

GS8322Z18AB

3A991.B.2.B

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

0.275 mA

5@Flow-Through/3@Pip

2MX18

3-STATE

1.99 mm

18

0.04 A

36

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

256000

UNSPECIFIED

未说明

70 °C

有

GS88136CGT-333

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS88136CGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

17 Bit

SRAM

9 Mbit

9437184 bit

Commercial

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm