N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T18BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

12 ns

85 °C

有

GS840H18AGT-100I

100 MHz

262144 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.7

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

SYNCHRONOUS

0.2 mA

256KX18

3-STATE

1.6 mm

18

0.03 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

144 Mbit

1

700 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Industrial

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

4.5 ns

85 °C

无

GS8162Z72CC-333I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS8162Z72CC

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

330 mA, 470 mA

4.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342QT19BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

-40 to 100 °C

Tray

GS8342QT19BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

785 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT20BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

940 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS880F36CGT

流过

Memory & Data Storage

9 Mbit

4

110 mA

7.5 ns

Flow-Through

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342Q07BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

4 ns

85 °C

有

GS832018AGT-400

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS832018AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

1.6 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-209

209

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS832272GC

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

8

225 mA, 280 mA

8 ns

Flow-Through/Pipelined

512 k x 72

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

有

GS816236DGD-400I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS816236DGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

36 Bit

2.7, 3.6 V

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4 ns

85 °C

无

GS8321E36AD-400I

400 MHz

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.31

BGA

400 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

-40 to 100 °C

GS8321E36AD

e0

无

3A991.B.2.B

锡铅

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

0.37 mA

4 ns

Flow-Through/Pipelined

1MX36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8321E32AGD

同步突发

Memory & Data Storage

36 Mbit

4

260 mA, 315 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS880E18CGT

DCD

Memory & Data Storage

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4 ns

70 °C

有

GS8322Z18AGB-400

400 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8322Z18AGB

3A991.B.2.B

NBT Pipeline/Flow Through

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

318 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

318 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

144 Mbit

1.265 A

0.45

16 M x 9

144

N/A

-

TQFP-100

100

66

0 C

2.7 V

+ 70 C

有

Commercial grade

133.3 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

0 to 70 °C

Tray

GS880F18CGT

流过

Memory & Data Storage

9 Mbit

2

105 mA

7.5 ns

Flow-Through

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

4.5 ns

85 °C

无

GS832136AD-375I

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS832136AD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS88136CGT-200IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

-40 to 85 °C

Tray

GS88136CGT

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T08BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

495 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

3.3000 V

3 V

Synchronous

2 MWords

32 Bit

3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS864032GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS816136DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D07BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

640 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

YES

119

119

256000

PLASTIC/EPOXY

未说明

8.5 ns

70 °C

有

GS840H18AGB-166

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

BGA,

网格排列

3

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

256KX18

2.19 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881E18CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM