N/A

-

165

400 MHz

FBGA

1.8000 V

Synchronous

18 Bit

0 to 70 °C

0.45

18

N/A

-

BGA-119

119

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

无

GS832218AB-333IV

活跃

GSI TECHNOLOGY

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

-40 to 100 °C

Tray

GS832218AB

无

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

300 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

-40 to 100 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

Memory & Data Storage

114 Mbit

925 mA

0.45

4 M x 36

SRAM

144

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8640Z18GT

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

205 mA, 270 mA

7.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT37E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

995 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT37BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

1.095 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

7.5 ns

70 °C

无

GS832236AB-150V

150 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS832236AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

85 °C

有

GS832132AGD-150V

BGA

5.3

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS832132AGD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

1.4 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS864018GT-167IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

125@Flow-Through/167@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

TQFP-100

100

2.3 V

18

- 40 C

3.6 V

+ 85 C

375 MHz

有

Industrial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS8320Z36AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

有

GS832036AGT-150IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

QFP

Industrial grade

133@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

-40 to 100 °C

3A991.B.2.B

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662S09BD-350

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

BGA

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

0 to 85 °C

Tray

GS8662S09BD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

695 mA

Pipelined

8 M x 9

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

144 Mbit

2

890 mA

Pipelined

16 M x 8

22 Bit

144 Mbit

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS832018AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

-40 to 100 °C

Tray

GS8662T36BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

810 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

0 to 70 °C

Tray

GS88218CGB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

表面贴装

1.9 V

9 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

300 MHz

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT10BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

505 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

18

0 C

3.6 V

+ 70 C

400 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

85 °C

有

GS832136AGD-400

400 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS832136AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

SMD/SMT

2.3 V

15

- 40 C

3.6 V

+ 85 C

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

SDR

Details

SyncBurst

GSI技术

GSI技术

-40 to 85 °C

Tray

GS864418GE

同步突发

Memory & Data Storage

72 Mbit

2

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Details

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS8640E18GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

270 mA, 370 mA

5.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS881E32CD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS881E32CD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

1.4 mm

32

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

YES

119

119

512000

PLASTIC/EPOXY

未说明

1.6 ns

70 °C

无

GS815036AB-300

524288 words

2.5 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.36

BGA

BGA,

网格排列

3

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

512KX36

1.99 mm

36

18

PARALLEL

LATE-WRITE SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

153.8@Flow-Through/225@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

225 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

0 to 70 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

270 mA, 370 mA

6.5@Flow-Through/2.7

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

表面贴装

2.7, 3.6 V

36 Bit

1 MWords

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320Z36AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaSIO DDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302S09E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

16 M x 9

SRAM

144 Mbit

Commercial

SRAM