N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Compliant

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302S08E

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

900 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.5 ns

85 °C

有

GS832118AGD-375I

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

-40 to 100 °C

Tray

GS832118AGD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

18874368 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

357 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

357 MHz

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

72 Mbit

2

985 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 85 °C

Tray

GS8642Z36GB

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

4

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT07GE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

800 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 90 °C

Tray

GS8662D38BGD

SigmaQuad-II+

90 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.275 A

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662T38BGD-450I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.44

BGA

Industrial grade

450 MHz

FBGA

-40 to 100 °C

Tray

GS8662T38BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

910 mA

Pipelined

2 M x 36

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

333 MHz

有

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

QDR-II

N

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8662Q37BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.1 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

16 MWords

18 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

未说明

0.45 ns

85 °C

有

GS82582DT20GE-550

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.57

Commercial grade

550 MHz

BGA

QDR

1.8000 V

1.7 V

0 to 85 °C

Tray

GS82582DT20GE

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

OTHER

288 Mbit

2

SYNCHRONOUS

1.13 A

Pipelined

16 M x 18

1.5 mm

18

22 Bit

SRAM

288 Mbit

301989888 bit

Commercial

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D11BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

940 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662T38BGD-500

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.44

BGA

Commercial grade

500 MHz

FBGA

DDR

0 to 85 °C

Tray

GS8662T38BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

985 mA

Pipelined

2 M x 36

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT38BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.095 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

有

GS8321E18AGD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8321E18AGD

3A991.B.2.B

同步突发

85 °C

0 °C

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

222@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.5 ns

85 °C

有

GS832218AGB-333I

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

-40 to 100 °C

Tray

GS832218AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Industrial grade

550 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342DT20BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

950 mA

Pipelined

2 M x 18

19 b

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT38BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

885 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS8321E18AGD

同步突发

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS832218AGB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

800 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-209

YES

209

209

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

2.3 ns

70 °C

无

GS816273CC-333

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

BGA

Commercial grade

333 MHz

BGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS816273CC

无

3A991.B.2.B

Pipeline

70 °C

0 °C

PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

18 Mbit

8

SYNCHRONOUS

460 mA

Pipelined

256 k x 72

1.7 mm

72

18 b

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D11BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

705 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662DT07BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

590 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342Q08BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

955 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

4.5 ns

70 °C

有

GS8161Z18DGT-333

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

QFP

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8161Z18DGT

3A991.B.2.B

NBT

70 °C

0 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T37BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

860 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无